IPD900P06NM
10Pages

Catalog excerpts

Table 1 Key Performance Parameters MOSFET OptiMOS™ PowerTransistor, -60 V Features • P-Channel • Very low on-resistance RDS(on) • 100% avalanche tested • Normal Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Type / Ordering Code Final Data Sheet

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TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....

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OptiMOS™ Power Transistor, -60 V IPD900P06NM at Tc=25 °C, unless otherwise specified Table 2 Maximum ratings 11 See Diagram 3 for more detailed information 2) See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain connection. PCB is vertical in still air. Final Data Sheet

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OptiMOS™ Power Transistor, -60 V IPD900P06NM Table 5 Dynamic characteristics 11 See diagram ,Gate charge waveforms, for gate charge parameter definition Final Data Sheet 4 Rev.2.0, 2019-04-03

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Final Data Sheet

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Diagram 5: Typ. output characteristics Final Data Sheet Rev. 2.0, 2019-04-03

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Diagram 9: Normalized drain-source on resistance Diagram 10: Typ. gate threshold voltage RDs^f), Id=-22 A, \/gs=-10 V /GS(th=f(Tj), /gs=/ds; parameter: Id Diagram 12: Forward characteristics of reverse diode Final Data Sheet Rev. 2.0, 2019-04-03

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Diagram 13: Avalanche characteristics Diagram 14: Typ. gate charge lAs=f(tAv); Rgs=25 W; parameter: Tj,start VGs=f( Qgate), Id=-16.4 A pulsed, Tj=25 °C; parameter: VDd Final Data Sheet

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OptiMOS™ Power Transistor, -60 V IPD900P06NM 1. INDUSTRIAL QUALITY GRADE 2. ALL DIMENSIONS REFER TO JEDEC STANDARD TO-2S2 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. Figure 1 Outline PG-TO 252-3, dimensions in mm/inches Final Data Sheet

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OptiMOS™ Power Transistor, -60 VIPD900P06NMRevision History IPD900P06NM Revision: 2019-04-03, Rev. 2.0Previous Revision Revision Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munchen, Germany © 2019...

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