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IPD900P06NM

Product catalog summary

Overview: The document is a technical data sheet for the OptiMOS Power Transistor, model IPD900P06NM, a -60 V P-Channel MOSFET. It highlights the key features, specifications, and performance parameters of the transistor.

Key Features: The transistor is characterized by very low on-resistance, 100% avalanche testing, normal level enhancement mode, and compliance with RoHS and halogen-free standards.

Specifications: The maximum ratings include a continuous drain current of -16.4 A, a pulsed drain current of -65.6 A, and a gate-source voltage range of -20 to 20 V. The power dissipation is rated at 63 W, and the operating temperature range is -55 to 175 °C.

Thermal Characteristics: The thermal resistance from junction to case is 2.4 °C/W, and from junction to ambient is 75 °C/W.

Electrical Characteristics: The drain-source breakdown voltage is -60 V, with a gate threshold voltage ranging from -2.1 to -4 V. The on-state resistance is between 75 and 90 mΩ.

Dynamic Characteristics: The input capacitance is 1100 pF, output capacitance is 160 pF, and reverse transfer capacitance is 39 pF. The switching times include a turn-on delay of 9 ns and a turn-off delay of 25 ns.

Gate Charge Characteristics: The total gate charge is 27 nC, with a gate plateau voltage of -5.6 V.

Reverse Diode Characteristics: The diode continuous forward current is -16 A, with a forward voltage of -0.9 to -1.2 V.

Diagrams: The document includes diagrams illustrating power dissipation, drain current, safe operating area, transient thermal impedance, output characteristics, and more.

Package Outlines: The package dimensions are provided in both millimeters and inches, with detailed measurements for various components of the package.

Revision History: The document notes the release of the final version on April 3, 2019.

Legal and Safety Information: The document includes disclaimers regarding the use of the product in life-support devices and systems, and advises on compliance with legal and safety standards.

Catalog excerpts

Table 1 Key Performance Parameters MOSFET OptiMOS™ PowerTransistor, -60 V Features • P-Channel • Very low on-resistance RDS(on) • 100% avalanche tested • Normal Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Type / Ordering Code Final Data Sheet

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TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....

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OptiMOS™ Power Transistor, -60 V IPD900P06NM at Tc=25 °C, unless otherwise specified Table 2 Maximum ratings 11 See Diagram 3 for more detailed information 2) See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain connection. PCB is vertical in still air. Final Data Sheet

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OptiMOS™ Power Transistor, -60 V IPD900P06NM Table 5 Dynamic characteristics 11 See diagram ,Gate charge waveforms, for gate charge parameter definition Final Data Sheet 4 Rev.2.0, 2019-04-03

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Final Data Sheet

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Diagram 5: Typ. output characteristics Final Data Sheet Rev. 2.0, 2019-04-03

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Diagram 9: Normalized drain-source on resistance Diagram 10: Typ. gate threshold voltage RDs^f), Id=-22 A, \/gs=-10 V /GS(th=f(Tj), /gs=/ds; parameter: Id Diagram 12: Forward characteristics of reverse diode Final Data Sheet Rev. 2.0, 2019-04-03

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Diagram 13: Avalanche characteristics Diagram 14: Typ. gate charge lAs=f(tAv); Rgs=25 W; parameter: Tj,start VGs=f( Qgate), Id=-16.4 A pulsed, Tj=25 °C; parameter: VDd Final Data Sheet

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OptiMOS™ Power Transistor, -60 V IPD900P06NM 1. INDUSTRIAL QUALITY GRADE 2. ALL DIMENSIONS REFER TO JEDEC STANDARD TO-2S2 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. Figure 1 Outline PG-TO 252-3, dimensions in mm/inches Final Data Sheet

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OptiMOS™ Power Transistor, -60 VIPD900P06NMRevision History IPD900P06NM Revision: 2019-04-03, Rev. 2.0Previous Revision Revision Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munchen, Germany © 2019 Infineon...

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IPD900P06NM

IPD900P06NM

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