MOSFET 600V CoolMOS™ P7 PowerTransistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler. Features • Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Excellent ESD robustness >2kV (HBM) for all products • Better RDS(on)/package products compared to competition enabled by a low RDS(on)*A (below 1Ohm*mm2) Benefits • Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages • Simplified thermal management due to low switching and conduction losses • Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due to >2 kV ESD protection • Suitable for a wide variety of applications and power ranges Potential applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Final Data Sheet

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....

at T = 25°C, unless otherwise specified Table 2 Maximum ratings 11 Limited by Tj,max. Maximum Duty Cycle D = 0.50; TO-220 equivalent 2) Pulse width tp limited by Tj, 3) Identical low side and high side switch with identical Rg Final Data Sheet 3 Rev. 2.0, 2019-02-28

Table 3 Thermal characteristics Final Data Sheet

at 7j=25°C, unless otherwise specified Table 4 Static characteristics 11 Co(er) is a fixed capacitance that gives the same stored energy as C0ss while VDs is rising from 0 to 400V 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDs is rising from 0 to 400V Final Data Sheet 5 Rev. 2.0, 2019-02-28

Table 7 Reverse diode characteristics Final Data Sheet

Diagram 1: Power dissipation Diagram 2: Safe operating area Zthjc =f(tp); parameter: D=tp/T Final Data Sheet Rev. 2.0, 2019-02-28

Diagram 5: Typ. output characteristics Diagram 6: Typ. output characteristics Diagram 7: Typ. drain-source on-state resistance Diagram 8: Drain-source on-state resistance Final Data Sheet

Diagram 10: Typ. gate charge 12 Qgate [nC] VGs=f(Qgate); /d=22.5 A pulsed; parameter: Vdd Diagram 12: Avalanche energy Diagram 11: Forward characteristics of reverse diode 103 Final Data Sheet Rev. 2.0, 2019-02-28

VDS[V] Eoss=f(VDS) Final Data Sheet

5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform Final Data Sheet

Final Data Sheet

7 Appendix A Table 11 Related Links • IFX CoolMOS P7 Webpage: www.infineon.com • IFX CoolMOS P7 application note: www.infineon.com • IFX CoolMOS P7 simulation model: www.infineon.com • IFX Design tools: www.infineon.com Final Data Sheet

600V CoolMOS™ P7 PowerTransistorIPB60R045P7Revision History IPB60R045P7 Revision: 2019-02-28, Rev. 2.0Previous Revision Revision Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munchen, Germany © 2018 Infineon...