MOSFET OptiMOSTM6 Power-Transistor, 40 V Features • Optimized for synchronous application • Very low on-resistance ^DS(on) • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • 175 °C rated Table 1 Key Performance Parameters Type / Ordering Code 1) J-STD20 and JESD22 Final Data Sheet

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....

at Ta=25 °C, unless otherwise specified Table 2 Maximum ratings Note / Test Condition Continuous drain current Avalanche energy, single pulse3 Gate source voltage Power dissipation Operating and storage temperature 2 Thermal characteristics Table 3 Thermal characteristics 11 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet

at 7]=25 °C, unless otherwise specified Table 4 Static characteristics 11 Defined by design. Not subject to production test. 2) See "Gate charge waveforms" for parameter definition Final Data Sheet

Table 7 Reverse diode 11 Defined by design. Not subject to production test. Final Data Sheet

Diagram 2: Drain current Diagram 3: Safe operating area Diagram 4: Max. transient thermal impedance 103 tp [s] Zthjc=f(fp); parameter: D=fp/T Final Data Sheet

Diagram 5: Typ. output characteristics Diagram 6: Typ. drain-source on resistance Final Data Sheet Rev. 2.0, 2018-06-04

Diagram 9: Normalized drain-source on resistance Diagram 10: Typ. gate threshold voltage _Tj_[°C]_ /GS(th=f(Tj), /gs=/ds; parameter: Id Diagram 12: Forward characteristics of reverse diode Final Data Sheet

Diagram Gate charge waveforms Final Data Sheet

Figure 1 Outline PG-TSDSON-8 FL, dimensions in mm/inches Final Data Sheet

OptiMOS™ 6 Power-Transistor, 40 VBSZ063N04LS6Revision History BSZ063N04LS6 Revision: 2018-06-04, Rev. 2.0Previous Revision Revision Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munchen, Germany © 2018...