BAW78.../BAW79... Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 single common cathode Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Peak forward current Surge forward current, t = 1 µs Non-repetitive peak surge forward current Total power dissipation Junction temperature Storage temperature package may be available upon special request

BAW78.../BAW79... Thermal Resistance Parameter Junction - soldering point 1) Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics 400 V Breakdown voltage V(BR) I(BR) = 100 µA Reverse current Forward voltage AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200mA, IR = 200mA, measured at IR = 20mA RL = 100Ω Test circuit for reverse recovery time D.U.T. Puls generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph calculation of RthJA please refer to Application Note Thermal...

Peak forward current IFM = ƒ (tp)

1) Ejector pin markings possible Foot Print Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.2

BAW78.../BAW79... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of...