Automotive MOSFETs OptiMOSTM Families – Green and Robust [www.infineon.com/automotivemosfet]

2 Infineon OptiMOSTM – Benchmark for Automotive MOSFETs OptiMOSTM Products are Best in Class OptiMOSTM superior performance is based on Infineon’s leading MOSFET technology combined with the unsurpassed quality of robust package: Best in class RDS(on) performance for increased system efficiency Highest current DPAK + D2PAK on the market for reduced ECU module size Lowest switching and conduction power losses for increased thermal system reliability Robust green package for easy process handling New OptiMOSTM-T2 Product Family New OptiMOSTM-T2 trench technology is the benchmark for applications...

3 Green and Robust Package INFINEON GREEN AND ROBUST MOSFET PACKAGES are designed to comply with RoHS (Restriction of the use of Hazardous Substances Directive) and WEEE (Waste Electrical and Electronic Equipment) regulations requirements. Lead-free PCB solders require higher peak reflow temperatures combined with increased stress for the package compared to leaded solders. To avoid any temperature overstress (e.g. delamination of mold compound and metallic contacts), Infineon Green and Robust MOSFET packages can sustain up to 260°C peak reflow temperatures and are fully backward compatible with...

4 Power Bond Technology POWER BOND IS INFINEON’S HIGH-CURRENT wirebond technology. It addresses the bondwire limitation in a MOSFET’s current rating. Power Bond reduces the RDS(on) drop of the bondwires and increases the current capability. This also improves the reliability by keeping the wirebonds cooler, even with high currents. Power Bond Technology allows up to four double-stitch 500ìm wirebonds on a single OptiMOSTM device, which enables a current rating of upto 180A in a TO263-7 package. Power Bond Technology also increase current rating of a DPAK of upto 100A. Thus a standard 80A D2PAK...

5 OptiMOSTM in Dual Super SO8 About the Package Two N-Channel MOSFETs in one package with two isolated leadframes One Dual Super SO8 can replace two DPAKs reducing area from 130mm² to 32mm² 4x reduction in PCB area and 2x reduction in part count Dual Super SO8 can replace two existing OptiMOSTM DPAK products for system level cost reduction (significant PCB area savings) Dual Super S08 has exposed pad heat sink and large source lead, thus provides higher current capabilities than a regular Dual S08 and same Rth as DPAK with same chip. All Bond wire is 200ìm thick for up to 20A current capability...

6 Company: S non Green products I Green products Device: P for Power MOSFET Package type: G for Dual Super SO8 P for TO220 B for D2PAK (TO263) D for DPAK (TO252) I for I2PAK (TO262) Continuous drain current/ID(max) P for P-Channel N for N-Channel Breakdown voltage divided by 10 S for SIPMOSTM Planar N-Channel S2 for OptiMOSTM Planar N-Channel S3 for OptiMOSTM-T Trench N-Channel S4 for OptiMOSTM-T2 Trench N-Channel P4 for OptiMOSTM-T2 Trench P-Channel L for Logic level RDS(on) in mÙ I P B 180 N 03 S4 L – 01 Naming System

Dual MOSFETs 14 Dual N-Channel OptiMOSTM 55V (Trench) Type RDS(on) @ 10V (max.) [m..] ID [A] RthJC (max.) [K/W] Package* IPG20N06S3L-23 .. 2 x 23.0 20 3.3 ..8 IPG20N06S3L-35 .. 2 x 35.0 20 5.0 ..8 IPG15N06S3L-45 .. 2 x 45.0 15 7.0 ..8 Dual N-Channel OptiMOSTM 55V (Planar) Type RDS(on) @ 10V (max.) [m..] ID [A] RthJC (max.) [K/W] Package* BSO604NS2 .. 2 x 35.0 5 50.0 ..7 NEW! IPG20N06S2L-35 .. 2 x 35.0 20 2.3 ..8 NEW! IPG20N06S2L-50 .. 2 x 50.0 20 2.9 ..8 NEW! IPG20N06S2L-65 .. 2 x 65.0 20 3.5 ..8 Dual N- + P-Channel OptiMOSTM-T 30V + 55V (Trench) Type RDS(on) @ 10V (max.) [m..] ID [A] RthJC (max.)...