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Plasma Profiling TOFMS

Plasma Profiling TOFMS
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Plasma Profiling TOFMS Ultra Fast Thin and Thick films Depth Profile Characterisation The full mass spectrum at any depth! Explore the future Automotive Test Systems I Process & Environmental I Medical I Semiconductor I Scientific HORIBA

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Applications ► Photovoltaics ► Photonics rare earths ► Ion implantation ► Hybrid materials ► Electrodes of Li batteries ► Corrosion studies ► Materials science The instrument is born from a EU project (“EMDPA”) coordinated by HORIBA Jobin Yvon which gathered 10 organisations from 7 countries with experts in material sciences, plasma physics/chemistry and plasma-surface interactions, renowned groups in GD-MS design, chemometrics and data handling and a provider of innovative TOFMS technologies. “EMDPA” partners have co-authored the chapter Analysis of Thin & Thick Films in the Handbook of...

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> Fast and direct analysis A rapid erosion plasma combined with an ultra fast detection is the key to analyse samples in minutes. In addition samples are measured direct without any preliminary preparation or transfer into a UHV chamber. > Thin to thick layers The high density plasma results in high sputtering rate and allows for measuring thick layers up to 100 pm. > High depth resolution Despite the mm size crater formed, layers as thin as 1 nm are measured. > Minimal Matric Effects The separation of sputtering and ionisation processes in the discharge volume gives the capability of a...

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■ The Glow Discharge (GD) Source is a low pressure, high density plasma (1014 /cm3) that provides very fast (several nm/s) and uniform sputtering of solid materials. ■ Pulsed RF operation allows that conductive and isolating materials or layers can be readily measured. ■ The auto-matching in pulsed mode allows users to automatically tune the source in real time as it sputters through multiple layers and coatings that vary in impedance. ■ The plasma gas ions involved in the sputtering process have a low energy (50 eV), causing negligible surface damage; as a result the GD plasma sputtering...

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All masses at once for depth profiling A Mass Spectrometer measures elements and compounds according to their mass to charge ratio m/z. Compared to Optical Detection which is simpler, Mass Detection is the technique of choice for sensitivity. Compare to sequential mass analyser, Time of Flight (TOF) records a full and continuous mass spectrum thereby providing constant monitoring of all species throughout the depth profile. Mass spectrum of a glass bulk sample containing Cs. The dynamic range allows measuring matrix, major and traces. Isotopic Measurement Isotopic labelling is often used in...

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■ Easy sample mounting. No UHV chamber, horizontal positioning, large samples possible. ■ Easily demountable GD source and sampler for fast cleaning. ■ Various holders for foils or small samples. Comprehensive software for ►lAnalytical tasks creation and optimisation Patented interface with flexible "blanking" capability to lower signals of major ions for enhanced dynamic range and to avoid detector saturation. ►l Full control compatible with remote operation

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1 Patented Pulsed RF source with automatching in pulsed mode for optimum measurement of multilayered materials. 1 Patented UFS device for fast sputtering of polymeric layers. 1 Possible addition of magnetic fields around the plasma chamber for enhanced performance (patented). ■ Fast switching gate valve to isolate the TOF and vacuum interface stages. ■ Multistage differential pumping. ■ Ultra Fast Time of Flight Mass Spectrometer in orthogonal configuration allowing for measuring transient ion signals generated from RF pulsed plasma. ■ MCP detector for high dynamic real time measurement of...

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Enhance signal to noise ratio The pulse timing effect With millisecond pulsed RF operation appears a unique feature that is central to the operation of the Plasma Profling TOFMS instrument. Various ionization mechanisms take place at different moments of the RF period. Since TOFMS acquires a full spectrum every 30 ps, TOFMS is perfectly adapted to monitor transient signals of the pulsed plasma over the RF period (few ms) with a pulse which can be varied from 0.3 ms to few ms. A time-resolved source profile is thus generated and an optimum time window may be selected per element to create...

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Multidimensional Software TOF Viewer: The entire mass spectrum at any depth and any time in the RF period. Optimisation of the analytical signals per element. Depth Profile/ Source Profile, Mass Spectrum, Isotope table/ Operating parameters 1 Depth profile Elements & Isotopes table Source profile Mass spectrum Operating parameters Measurement of a Co layer containing nanoparticles of CeO2 on ferritic steel. The dynamic range allows measuring matrix, major and traces. Full control of operating parameters Data handling and reporting Check up and control of voltages and vacuum levels Each...

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Applications Speed / Depth Resolution / Sensitivity Study of Tb & Eu co-doped ZnO layers for white LEDs [Eu,Tb:ZnO/Eu:ZnO] Multilayer 50 nm each layer by RF magnetron sputtering Annealing effect - orrelation between depth profile and PL data: change of matrix ZnO to ZnSiO3 more favorable to the luminescence of rare earth C Courtesy of CIMAP (Ions, Materials and Photonics Research Center), University of Caen. Solar Energy Study of As doped CdTe deposited on glass in a horizontal AP-MOCVD reactor Quantification of As • Comparison with SIMS • Good agreement down to 1017 atoms/cm3 • Fast...

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Ultra Fast and Sensitive Depth Profile and Bulk Elemental and Ultra Fast Sensitive Depth Isotopic measurement of conductive and non conductive materials and layers. Simultaneous measurement of all elements and compounds from mass 1 to mass 250 - and above if needed - at each depth (for depth profile). ► Compact instrument WxDxH 140 x 90 x 110 cm, weight 296 kg ► Easy sample handling (no need for UHV chamber, horizontal positioning) ► Nanometre Depth Resolution ► Dynamic range of 1010 for the simultaneous measurement of major, minor and trace elements in each layer and at interfaces ► Double...

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