Exicor® PV-Si
2Pages

BIREFRINGENCE MEASUREMENT Exicor® PV-Si PRODUCT BULLETIN During the production of Si solar panels, stress in Si crystals DESIGNED FOR SIMPLE, STRAIGHT FORWARD often remains undetected long into the fabrication process. We describe a stress birefringence instrument for measuring An ingot as large as 200 mm in diameter and 500 mm long Si ingots, either squared or as-grown, before they are sawed can be characterized manually or automatically mapped into wafers. When this instrument is used as a QC tool, and graphically displayed. Once a sample is placed on low quality Si ingots or segments can be identified before the translation stage, intuitive software guides the operator subsequent processing costs are incurred. In addition, this through the step measurement process. User interface instrument provides growers of Si crystals a tool with which software calculates the retardation value and fast axis angle to improve the quality of Si ingots so they can produce and displays them in a variety of formats. The software also thinner wafers with low mechanical yield loss. provides file management and calibration features.                                                                                         Hinds Instruments’ Exicor® Birefringence Measurement System PV-Si is an extension of the work horse platform Applications  Quality control metrology of the Exicor birefringence measurement system family of  Birefringence measurements of Ingots grown from products. This system employs high quality, symmetrical semiconductor materials such as Si and GaAs photoelastic modulators, a 1550 nm laser, and a Ge avalanche photodiode detector to enable high accuracy birefringence measurements for Si materials used in both the photovoltaic and semiconductor industries. In addition to Si, materials such as sapphire, silicon carbide, zinc selenide, cadmium sulfide can also be measured with this system. The PV-Si Ingot model is robust and versatile, built Significant Features  Unprecedented sensitivity in low-level birefringence measurement  Simultaneous measurement of birefringence magnitude and angle to hold and measure a 500mm length of raw ingot up to diameters of 8 inches. The bench top design and intuitive automated scanning software make this product the best  moving parts in the optical system No choice for material improvement R&D efforts and day-in-  Automatic mapping of variable-sized optical elements day-out evaluation of raw Si ingots as well as other high tech materials.                                                                                          Photoelastic modulator technology  Simple, user-friendly operation LEADING EDGE SENSITIVITY AND REPEATABILITY Using Hinds Instruments’ patented Photoelastic Modula

BIREFRINGENCE MEASUREMENT Exicor® PV-Si PRODUCT BULLETIN The Exicor PV-Si measures retardation integrated along an optical path through the optical sample under investigation. It is designed to measure and display both the magnitude EXTENDED RANGE and fast axis orientation of the sample’s optical retardation. In this unique design the ingot remains fixed and the Exicor source and detector modules are moved by the PC-controlled stages. A 1550 nm laser beam is polarized Resolution / Repeatability and then modulated by the PEM in the source module. The modulated beam is transmitted through the...