PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C) Large photosensitive area 200 ìm APPLICATIONS Optical high-speed waveform measurements Optical communications DESCRIPTION HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses. The GaAs MSM Photodetector G4176-03 features 30 ps response time for both rise & fall while keeping a low dark current (100 pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096-03 is 40 ps. Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM Photodetectors are suited for measurements of optical high-speed waveform and optical communications. There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and the polarity of an output signal depends on its connection. Two kinds of packages are prepared for each MSM Photodetector. The package of G4176-03 & G7096-03 is a coaxial metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G4176-01 & G7096-01 is a TO-18, which is very common. An optical fiber or connector input types are available as a custom option. Contact your local representative for more information. G4176-03 G7096-03 G4176-01 G7096-01 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2006 Hamamatsu Photonics K.K.

ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) Symbol Vb Ö Top(a) Tstg Unit V mW mW °C °C Symbol ë ëp A Unit nm nm mm2 mm2 Value 450 to 870 850 0.2 0.2 1 1 TO-5 (Unified with SMA connector) TO-18 Condition Vb = 7 V Vb = 7 V Radiant sensitivity Dark Current NEP *3 G4176-03 G4176-01 Terminal Capacitance G4176-03 *4 G4176-01 Rise Time G4176-03 G4176-01 Fall Time G4176-03 G4176-01 S Id A/W pA Min. 0.2 - 0.2 X 10-15 0.2 X 10-15 - - - - - - ë = 850 nm Item Symbol Condition Value Unit Typ. 0.3 100 3 X 10-15 4 X 10-15 0.3 0.5 30 50 30 50 Max. - 300 - - 0.4 0.6 40 80 40 80 Ct...

Symbol ë ëp A Unit nm nm mm2 mm2 Value 850 to 1650 1500 0.2 0.2 1 1 TO-5 (Unified with SMA connector) TO-18 Condition Vb = 7 V Vb = 7 V Radiant sensitivity Dark Current NEP *3 G7096-03 G7096-01 Terminal Capacitance G7096-03 *4 G7096-01 Rise Time G7096-03 G7096-01 Fall Time G7096-03 G7096-01 S Id A/W ìA Min. 0.2 - 0.2 X 10-10 0.2 X 10-10 - - - - - - ë = 1.3 ìm Item Symbol Condition Value Unit Typ. 0.4 5 2 X 10-10 3 X 10-10 0.7 0.9 40 60 60 80 Max. - 20 - - 0.8 1.0 60 80 100 100 Ct tr tf 10 to 90 % 90 to 10 % ë = 1.3 ìm W/Hz1/2 pF ps ps Wavelength (ìm) Radiant Sensitivity (A/W) (Vb = 7 V) G7096...

ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) 1/4-36UNS-2B 9.6 3.0 2.0 ö7.9 10 ö8.2 2.3 12 min. 3.6 1.2 ö5.4 ö4.7 BIAS / OUTPUT* OUTPUT / BIAS* ö0.45LEAD G4176-03 G7096-03 G4176-01 G7096-01 BIAS-TEE Optical Input Electric Output Power Supply + (or -) - (or +) BIAS CASE G4176-03 (G7096-03) G4176-03 G7096-03 G4176-01 G7096-01 Output DIMENSIONAL OUTLINES (Unit : mm) (BOTTOM VIEW) SENSITIVE SURFACE CASE CHIP OUTPUT/BIAS* *Both polarities of the bias voltage are available. (BOTTOM VIEW) CASE CHIP SENSITIVE SURFACE + (or -) - (or +) G4176-01 (G7096-01) Optical Input Electric...