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Si PIN photodiodes S1223 series

Si PIN photodiodes S1223 series

Si PIN photodiodes S1223 series

Product catalog summary
Overview: The S1223 series of Si PIN photodiodes by Hamamatsu are designed for high sensitivity in the visible to near-infrared range, suitable for precision photometry and analytical equipment. They offer high reliability and a high-speed response.
Specifications:
  • Two models: S1223 and S1223-01.
  • Cutoff frequency: S1223 at 30 MHz, S1223-01 at 20 MHz.
  • Low capacitance with a TO-5 package.
  • Photosensitive area: S1223 is 2.4 × 2.8 mm, S1223-01 is 3.6 × 3.6 mm.
Absolute Maximum Ratings:
  • Reverse voltage: 30 V max.
  • Power dissipation: 100 mW.
  • Operating temperature: -40 to +100 °C.
  • Storage temperature: -55 to +125 °C.
Electrical and Optical Characteristics:
  • Spectral response range: 320 to 1100 nm.
  • Peak sensitivity wavelength: 960 nm.
  • Photosensitivity at peak wavelength: 0.6 A/W.
  • Dark current at VR=20 V: S1223 is 0.1 to 10 nA, S1223-01 is 0.2 to 10 nA.
  • Terminal capacitance at VR=20 V, f=1 MHz: S1223 is 10 pF, S1223-01 is 20 pF.
Graphical Data:
  • Spectral response graph shows photosensitivity across wavelengths from 300 to 1100 nm.
  • Dark current vs. reverse voltage graph indicates current stability across voltage changes.
  • Terminal capacitance vs. reverse voltage graph shows capacitance behavior under varying voltages.
Dimensional Outlines:
  • Detailed dimensions provided for both S1223 and S1223-01 models, including photosensitive area and window specifications.
Additional Information:
  • Product specifications are subject to change for improvements.
  • Warranty is valid for one year, limited to repair or replacement.
  • Contact information for Hamamatsu offices worldwide is provided.
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Catalog excerpts

Si PIN photodiodes S1223 series-1

For visible to near IR, precision photometry High sensitivity in visible to near infrared range Optical measurement equipment High reliability High-speed response S1223: fc=30 MHz S1223-01: fc=20 MHz Low capacitance Structure Parameter Dimensional outline Window material Package Photosensitive area size Effective photosensitive area Absolute maximum ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature Symbol VR max P Topr Tstg Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Short circuit current Dark current Temp. coefficient of ID Cutoff frequency Terminal capacitance Noise equivalent power

 Open the catalog to page 1
Si PIN photodiodes S1223 series-2

Photosensitivity temperature characteristic Terminal capacitance vs. reverse voltage Dark current vs. reverse voltage (Typ. Ta=25 °C) Terminal capacitance Dark current

 Open the catalog to page 2
Si PIN photodiodes S1223 series-3

Dimensional outlines (unit: mm) Photosensitive surface Photosensitive surface Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Distance from photosensitive area center to cap center -0.6≤X≤0 -0.3≤Y≤+0.3 The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0196EB The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0193EC Information described in this material is current as of February, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons....

 Open the catalog to page 3

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
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