Si PIN photodiode S8650
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Catalog excerpts

Si PIN photodiode S8650 - 1

Flat surface ideal for bonding to scintillator The S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 μm). When bonded to a scintillator, the flat surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between. We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us. Flat epoxy coating surface ideal for bonding to scintillator Flatness: ±5 μm Scintillation X-ray detectors Calorimeters, etc. Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage VR Max. 100 V Operating temperature Topr -20 to +60 °C Storage temperature Tstg -20 to +80 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Dark current Cutoff frequency Terminal capacitance Noise equivalent power

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Si PIN photodiode S8650 - 2

Dark current vs. reverse voltage Dark current Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C, f=1 MHz) Terminal capacitance

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Si PIN photodiode S8650 - 3

Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.2) +0 White ceramic Photosensitive surface Epoxy resin flatness: ±5 µm 1.25 KPINA0088EB Information described in this material is current as of April, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary...

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