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Si PIN photodiode S4707-01

Si PIN photodiode S4707-01

Product catalog summary

Overview: The Si PIN photodiode S4707-01 is designed for general photometry applications, featuring a clear plastic package and a 4-pin DIP type with an active area of 2.4 × 2.8 mm.

Absolute Maximum Ratings: The photodiode can withstand a reverse voltage of up to 20 V. It operates within a temperature range of -25 to +85 °C and can be stored between -40 to +100 °C. Exceeding these ratings may degrade product quality.

Electrical and Optical Characteristics: At a temperature of 25 °C, the photodiode has a spectral response range from 320 to 1100 nm, with peak sensitivity at 960 nm. Photosensitivity is between 0.5 and 0.6 A/W. The short circuit current is 6.6 μA under specific conditions, and the dark current is between 0.08 and 5 nA at a reverse voltage of 10 V. The cutoff frequency is 20 MHz, and terminal capacitance ranges from 14 to 30 pF.

Applications: The photodiode is suitable for use in optical switches and similar applications.

Features: The device is housed in a clear plastic package measuring 4.5 × 5.5 mm.

Spectral Response and Graphs: The document includes graphs showing the relationship between photosensitivity and wavelength, dark current versus reverse voltage, and terminal capacitance versus reverse voltage, providing visual insights into the photodiode's performance characteristics.

Precautions and Warranty: The document advises contacting the manufacturer for the latest specifications and highlights that the product warranty is valid for one year, covering repair or replacement for defects reported within this period. It also notes that the information is accurate as of October 2017 and subject to change.

Catalog excerpts

Si PIN photodiode for general photometry Clear plastic package: 4.5 × 5.5 mm 4-pin DIP type Active area: 2.4 × 2.8 mm Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR max Topr Tstg Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Short circuit current Dark current Cutoff frequency Terminal capacitance

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Spectral response Dark current vs. reverse voltage (Typ. Ta=25 °C) Dark current Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) Terminal capacitance

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Photosensitive surface Dimensional outline (unit: mm) NC Cathode Anode Cathode Tolerance unless otherwise noted: ±0.1, ±2° Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y≤±0.2, θ≤±2° KPINA0099EB Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October 2017. Product specifications are subject to change without prior notice due to improvements...

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.

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