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Si PIN photodiode S4707-01

Si PIN photodiode S4707-01
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Si PIN photodiode for general photometry Clear plastic package: 4.5 × 5.5 mm 4-pin DIP type Active area: 2.4 × 2.8 mm Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR max Topr Tstg Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Short circuit current Dark current Cutoff frequency Terminal capacitance

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Spectral response Dark current vs. reverse voltage (Typ. Ta=25 °C) Dark current Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) Terminal capacitance

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Photosensitive surface Dimensional outline (unit: mm) NC Cathode Anode Cathode Tolerance unless otherwise noted: ±0.1, ±2° Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y≤±0.2, θ≤±2° KPINA0099EB Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October 2017. Product specifications are subject to change without prior notice due to...

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