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Si PIN photodiode S3759

Si PIN photodiode S3759

Product catalog summary

Overview: The S3759 is a Si PIN photodiode designed for detecting and measuring infrared energy, particularly from YAG lasers at 1.06 μm. It offers high sensitivity, fast response, and low capacitance, making it suitable for applications in analytical equipment.

Key Features:

High sensitivity in the infrared region with a photo sensitivity of 0.38 A/W at 1.06 μm.
Fast response time of 12.5 ns at a reverse voltage of 100 V.
Low terminal capacitance of 10 pF at 100 V.
Large active area of ϕ5 mm for easier optical alignment.
High reliability with a TO-8 metal package.

Applications: Primarily used for YAG laser detection and in various analytical equipment.

Specifications:

Maximum reverse voltage: 150 V.
Operating temperature range: -40 to +100 °C.
Storage temperature range: -55 to +125 °C.
Spectral response range: 360 to 1120 nm.
Peak sensitivity wavelength: 980 nm.
Short circuit current: 14 to 19 μA at 2856 K, 1000 lx.
Dark current: 1 to 10 nA at 100 V.

Performance Graphs: The document includes graphs showing spectral response, dark current vs. reverse voltage, and terminal capacitance vs. reverse voltage, highlighting the photodiode's performance characteristics.

Dimensional Outline: Detailed dimensions are provided for the photodiode, ensuring precise integration into systems.

Precautions and Warranty: Users are advised to adhere to maximum ratings to avoid quality degradation. The product comes with a one-year warranty limited to repair or replacement for defects.

Contact Information: Hamamatsu provides global contact details for customer support and further inquiries.

Catalog excerpts

Si PIN photodiode for visible to infrared photometry S3759 is a Si PIN photodiode developed to detect and measure infrared energy emitted from YAG lasers (1.06 μm). Compared to standard Si photodiodes, S3759 delivers exceptionally high sensitivity of 0.38 A/W at 1.06 μm. The PIN structure allows high-speed response and low capacitance. The active area is as large as ϕ5 mm, making optical axis alignment easier. High sensitivity in infrared region: 0.38 A/W (λ=1.06 μm) Low capacitance: Ct=10 pF (VR=100 V) Large active area: ϕ5 mm High reliability: TO-8 metal package Absolute maximum ratings Parameter Maximum reverse voltage Operating temperature Storage temperature Symbol VR max Topr Tstg Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Rise time Terminal capacitance

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Spectral response Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage Dark current Terminal capacitance

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Dimensional outline (unit: mm) ϕ13.9 ± 0.2 ϕ12.35 ± 0.1 ϕ10.5 ± 0.1 Photosensitive surface Chip position accuracy with respect to the cap center X, Y≤±0.4 K

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Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic packages / Precautions Technical information ∙ Si photodiode / Application circuit examples Information described in this material is current as of March, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery...

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