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Si PIN photodiode S15137

Si PIN photodiode S15137

Product catalog summary

Overview: The S15137 is a silicon PIN photodiode designed for YAG lasers with a wavelength of 1.06 µm. It offers enhanced photosensitivity, high-speed response, and low capacitance, making it suitable for applications such as fiber and YAG laser detection and analytical instruments.

Features:

High sensitivity in the infrared region with a photosensitivity of 0.52 A/W at 1.06 µm.
High-speed response time of 12.5 ns at a reverse voltage of 100 V.
Low capacitance of 10 pF at 100 V.
Large photosensitive area of ϕ5 mm for easier optical axis alignment.
High reliability with a TO-8 metal package.

Specifications:

Photosensitive area: ϕ5.0 mm.
Package: TO-8 with borosilicate glass window.
Reverse voltage: Maximum 150 V.
Operating temperature: -40 to +100 °C without dew condensation.
Storage temperature: -55 to +125 °C without dew condensation.

Electrical and Optical Characteristics:

Spectral response range: 360 to 1120 nm.
Peak sensitivity wavelength: 1000 nm.
Short circuit current: 16 to 21 µA at 1000 lx.
Dark current: 1 to 10 nA at 100 V.
Temperature coefficient of dark current: 1.15 times/°C.

Graphical Data:

Dark current vs. reverse voltage shows a typical increase with voltage.
Terminal capacitance vs. reverse voltage remains low across the range.
Spectral response graph indicates improved sensitivity over previous products.
Sensitivity temperature characteristics show stability across wavelengths.

Dimensional Outline: The photodiode has precise chip positioning with respect to the cap center, ensuring accurate alignment in applications.

Recommended Soldering Condition: Maximum solder temperature is 260 °C for 10 seconds or less, once.

Precautions: Exceeding maximum ratings may degrade product quality. Ensure conditions are tested to avoid issues.

Contact Information: Hamamatsu provides global contact details for support and inquiries.

Catalog excerpts

Si PIN photodiode for visible to infrared photometry The S15137 is a Si PIN photodiode developed for YAG lasers (1.06 µm). The photosensitivity at 1.06 μm is 0.52 A/W (typ.), which is about 1.5 times higher than that of previous products. The PIN structure allows high-speed response and low capacitance. The photosensitive area is as large as ϕ5 mm, making optical axis alignment easier. High sensitivity in infrared region: 0.52 A/W (λ=1.06 µm) Fiber laser detection Large photosensitive area: ϕ5 mm High reliability: TO-8 metal package Structure Parameter Photosensitive area Package Window material Specification ϕ5.0 TO-8 Borosilicate glass Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Topr Tstg *1: When there is a temperature difference between a product and the surrounding area in high humidity environments, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: xceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the E product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Short circuit current Dark current Temperature coefficient of ID Rise time Terminal capacitance

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Spectral response Sensitivity temperature characteristics (Typ. Ta=25 °C) Previous product k current vs. reverse 0.2 voltage Terminal capacitance vs. reverse voltage Dark current vs. reverse voltage (Typ. Ta=25 °C) Terminal capacitance Dark current Terminal capacitance vs. reverse voltage

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S15137 Dimensional outline (unit: mm) Dimensional outline (unit: mm) 13.9 ± 0.2 Photosensitive surface 1.0 max. KPINB0280EC Case Chip position accuracy with respect to the cap center X, Y≤±0.4 KPINA0092EB Recommended soldering condition ∙ Solder temperature: 260 °C max. (10 s or less, once) Note: When you set soldering conditions, check that problems do not occur in the product by testing out the conditions in

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Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode / Technical note Information described in this material is current as of March 2022. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet...

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