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Si PIN photodiode S14605

Si PIN photodiode S14605

Product catalog summary

Overview: The S14605 is a large-area Si PIN photodiode designed for direct radiation detection, particularly effective for high-energy radiation. It features high quantum efficiency, high energy resolution, and low capacitance, making it suitable for applications such as direct X-ray detection and radiation detection of α rays, β rays, and charged particles.

Specifications:

Photosensitive Area: 9 × 9 mm
Depletion Layer: 0.5 mm
Package: Ceramic
Window Material: None

Absolute Maximum Ratings:

Reverse Voltage (VR): 150 V
Operating Temperature (Topr): -20 to +60 °C (No dew condensation)
Storage Temperature (Tstg): -20 to +80 °C (No dew condensation)

Note: Exceeding these ratings may degrade product quality.

Electrical and Optical Characteristics (at 25 °C):

X-ray Energy: Up to 50 keV
Dark Current (ID) at VR=100 V: 8 to 30 nA
Dark Current Temperature Coefficient (ICID): 1.12 times/°C
Cutoff Frequency (fc) at VR=100 V, RL=50 Ω, λ=780 nm: 20 MHz
Terminal Capacitance (Ct) at VR=100 V, f=10 kHz: 25 to 40 pF

Performance Graphs:

Dark Current vs. Reverse Voltage: Illustrates the relationship between reverse voltage and dark current, showing typical values at 25 °C.
Photosensitivity vs. X-ray Energy: Compares theoretical and simulated values for different depletion layer thicknesses.
Terminal Capacitance vs. Reverse Voltage: Shows how terminal capacitance varies with reverse voltage at 25 °C and 10 kHz.

Precautions: The document advises checking the latest specifications before use and notes that the warranty covers product repair or replacement for defects reported within one year of delivery, excluding natural disasters or improper use.

Contact Information: The document provides contact details for Hamamatsu offices worldwide, including the USA, Germany, France, UK, North Europe, Italy, China, and Taiwan.

Catalog excerpts

Large-area Si PIN photodiode for direct radiation detection The S14605 is an unsealed type large-area Si PIN photodiode for direct radiation detection. It can detect high-energy radiation with high efficiency. High quantum efficiency Direct X-ray detection High energy resolution R adiation detection (α rays, β rays, charged particles, etc.) Structure Parameter Photosensitive area Depletion layer Package Window material Specification 9×9 0.5 Ceramic None Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Topr Tstg *1: When there is a temperature difference between a product and the surrounding area in high humidity environments, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: xceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the E product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter X-ray energy Dark current Dark current temperature coefficient Cutoff frequency Terminal capacitance

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Dark current vs. reverse voltage Photosensitivity vs. X-ray energy (theoretical value) (Ta=25 °C) S14605 (depletion layer thickness: 500 µm) 0.2 S3590-09 (depletion layer thickness: 300 µm) Dark current 0.1 Terminal capacitance vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C, f=10 kHz) Terminal capacitance

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Dimensional outline (unit: mm) +0 White ceramic Photosensitive surface Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ‧ Disclaimer ‧ Metal, ceramic, plastic package products ‧ Unsealed products Technical information ‧ Si photodiode / Technical note Information described in this material is current as of March 2022. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as...

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