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Si PIN photodiode S12271

Si PIN photodiode S12271
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Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power meters. Quartz glass window Optical power meters Radiation detectors Large photosensitive area: φ4.1 mm High-speed response: 60 MHz (VR=100 V) Structure Parameter Package Photosensitive area size Effective photosensitive area Absolute maximum ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature Symbol VR max P Topr Tstg Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Temperature coefﬁcient of ID Terminal capacitance Cutoff frequency Noise equivalent power

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Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 °C) Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage Terminal capacitance Dark current

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Dimensional outline (unit: mm) Quartz glass Photosensitive surface 0.45 Lead 7.5 ± 0.2 Index mark ( 1.4) Case Distance from photosensitive area center to cap center -0.4≤X≤+0.4 -0.4≤Y≤+0.4 KPINA0114EA Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before...

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Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the...

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