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HAMAMATSU
Si Photodiodes

Si Photodiodes

Product catalog summary

Overview: This document serves as a comprehensive guide for selecting silicon (Si) photodiodes by Hamamatsu Photonics, covering applications from ultraviolet (UV) to near-infrared (IR) radiation detection. It details various photodiode types, specifications, applications, and packaging options.

Si Photodiode Types:

General Photometry: These photodiodes are designed for precision and general photometry, covering UV to near IR and visible ranges, with high sensitivity and low dark current.
High-Speed Response Si PIN Photodiodes: Used in optical communications and disk pickups, with cutoff frequencies from 10 MHz to over 1 GHz.
Multi-Element Type: Includes segmented photodiodes and one-dimensional arrays for applications like laser beam position detection.
Special Applications: Includes RGB color sensors, enhanced sensitivity types, and detectors for specific wavelengths like VUV and YAG lasers.

Packaging Options: Hamamatsu offers various packaging types including metal, ceramic, plastic, and surface mount types, with special packages featuring BNC connectors and scintillators for X-ray detection.

Applications: Si photodiodes are used in optical power meters, spectrophotometers, radiation detectors, baggage inspection equipment, automotive sensors, and LCD backlight color adjustment.

Technical Features: Known for excellent linearity, low noise, wide spectral response, mechanical ruggedness, and long life, Si photodiodes are suitable for medical, analytical, and scientific measurements.

Mounting Technology: Advanced mounting technologies like flip-chip bonding are described, which reduce parasitic capacitance and inductance, enhancing device performance.

Specifications: The document lists photodiodes with specific spectral response ranges, peak sensitivity wavelengths, photosensitivity, dark current, and package types. For instance, the S6428-01 is sensitive to blue light with a spectral response range of 400 to 540 nm and a peak sensitivity at 460 nm.

Procedures and Applications: Photodiodes are used in RGB color sensing for TFT-LCD monitors, laser detection, and electron beam detection, as well as in high-speed and low-light-level detection scenarios.

Norms and Standards: Typical operating conditions are specified, such as temperature (Typ. Ta=25 °C), with data on dark current versus reverse voltage, photosensitivity, and spectral response.

Recommendations: Specific photodiodes are recommended for particular applications, such as the S10043 for excimer laser detection due to its improved sensitivity stability.

Data Interpretation: Graphs and tables illustrate the spectral response and photosensitivity of different photodiodes, highlighting performance across various wavelengths and conditions.

Critical Information: Key parameters such as photosensitivity, dark current, and spectral response are crucial for selecting the appropriate photodiode. The importance of package type and size for system integration is emphasized.

Introduction: The document provides an overview of silicon photodiodes, focusing on spectral response, operational principles, and circuit applications. Key parameters like photosensitivity, quantum efficiency, and noise equivalent power are discussed.

Spectral Response: The spectral response is the relationship between photocurrent and incident light wavelength, with photosensitivity measured in A/W or V/W and quantum efficiency as a percentage.

Key Parameters:

Short Circuit Current (Isc): Current through the photodiode with zero load resistance.
Open Circuit Voltage (Voc): Voltage generated with infinite load resistance.
Dark Current (ID): Small current in the dark state, a major noise source with reverse voltage.
Shunt Resistance (Rsh): Voltage-to-current ratio near 0 V, affecting noise levels.
Terminal Capacitance (Ct): Affects response speed and gain peaking in I/V converters.
Rise Time (tr) and Cutoff Frequency (fc): Measures of time and frequency response.
Noise Equivalent Power (NEP): Light level for a signal-to-noise ratio of unity.
Maximum Reverse Voltage (VR max): Maximum allowable reverse voltage.

Principle of Operation: Silicon photodiodes operate as photoelectric converters with a PN junction, accelerating electron-hole pairs generated by incident light.

Equivalent Circuit: Includes components like series resistance, shunt resistance, and junction capacitance, influencing performance.

Application Circuits:

Low-Light-Level Detection: Circuits reduce electromagnetic and AC noise.
Light-to-Logarithmic-Voltage Conversion: Converts light levels to logarithmic voltage output.
Light Integration Circuit: Measures integrated or average power of light pulses.
Basic Illuminometer: Measures illuminance, calibrated with standard light sources.
Light Balance Detection: Uses reverse-parallel photodiodes and op amp converters.

Conclusion: The document provides insights into the operation and application of silicon photodiodes, highlighting their sensitivity, efficiency, and practical uses in various circuits.

Catalog excerpts

"■Selection guide - February 2014 Lineup of Si photodiodes for UV to near IR, radiation

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Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package ···················································· 5 Application examples ······················································ 8 Si photodiodes for precision photometry····················· • For UV to near IR ···························································· • For UV to near IR (IR sensitivity suppressed type) ······· • For visible range to near IR ············································ Si photodiodes for general photometry/visible range··· 13 • For visible range ·····························································...

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Surface mount type Si photodiodes ····························· • High-speed response Si PIN photodiodes ···················· • Segmented type Si photodiodes ··································· • Small plastic package type Si photodiodes ··················· • Small plastic package type Si PIN photodiodes ············ Si photodiodes with preamp, TE-cooled type Si photodiodes ···· 23 • Si photodiodes with preamp for measurement ············ 23 • TE-cooled type Si photodiodes ······································· 24 Si photodiodes for X-ray detection ······························ 25 • Si photodiodes...

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Si photodiodes Photodiodes are semiconductor light sensors that generate a current or voltage when the P-N junction in the semiconductor is illuminated by light. The term photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors used to detect the intensity of light. Photodiodes can be classified by function and construction as follows: • Si photodiode • Si PIN photodiode • Si APD (avalanche photodiode) All of these types provide the following features and are widely used for the detection of the presence, intensity and color of light. • • • • • • Excellent...

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Spectral response (typical example) Hamamatsu provides a lineup that covers a variety of spectral response ranges from 200 nm to 1200 nm. 0.5 0.4 0.3 S1226-8BQ (IR sensitivity suppressed type) S1227-1010BR (IR sensitivity suppressed type) 300 0.8 QE=100% S11499 series (Infrared sensitivity enhanced type) S3590-19 (Violet sensitivity enhanced type)

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Si photodiode package Hamamatsu provides a wide variety of packages including metal, ceramic, and plastic. Si photodiodes for precision photometry Type For visible range to near IR For UV to near IR (IR sensitivity suppressed type) S1337 series (excluding S1337-21) For UV to near IR Glass epoxy With BNC connector Si photodiodes for general photometry/visible range Type Visual-sensitive compensated For visible CIE standard range luminous efficiency approximation For visible range to near IR Glass epoxy High-speed response Si PIN photodiodes Type Cutoff frequency: 1 GHz or more Cutoff frequency:...

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