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Si photodiodes

Si photodiodes
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Si photodiodes

Product catalog summary
Overview: This document serves as a comprehensive guide for selecting silicon (Si) photodiodes by Hamamatsu, covering applications from ultraviolet (UV) to near-infrared (IR) detection. It details specifications, applications, and performance characteristics of various Si photodiodes.
1. Si Photodiodes for Precision Photometry: Designed for high sensitivity and low noise, these photodiodes are suitable for precision measurements across UV to near IR ranges, offering excellent linearity and various package types.
2. Si Photodiodes for General Photometry/Visible Range: These photodiodes are optimized for visible light detection with filters to enhance performance, used in applications requiring accurate visible light measurement.
3. High-Speed Response Si PIN Photodiodes: Optimized for high-speed applications, these photodiodes have cut-off frequencies from 10 MHz to over 1 GHz, ideal for optical communications and fast signal processing.
4. Multi-Element Type Si Photodiodes: Includes segmented and one-dimensional photodiode arrays for applications like laser beam position detection and spectrophotometry.
5. Surface Mount Type Si Photodiodes: Compact photodiodes designed for high-speed response, suitable for integration into surface-mounted devices.
6. Si Photodiodes with Preamp and TE-Cooled Types: These incorporate preamplifiers for enhanced signal processing and are available in thermoelectrically cooled versions for low-light-level detection.
7. Si Photodiodes for X-ray Detection: Photodiodes coupled with scintillators for X-ray detection, used in applications like baggage inspection and non-destructive testing.
8. Special Application Si Photodiodes: Covers photodiodes for specific applications such as RGB color sensing, VUV detection, and YAG laser detection.
9. Related Products: Includes modules and circuits related to Si photodiodes, such as RGB color sensor modules and evaluation circuits.
10. Description of Terms: Provides definitions and explanations of technical terms used throughout the document.
11. Principle of Operation and Equivalent Circuit: Explains the basic operation principles of photodiodes and provides equivalent circuit diagrams.
12. Application Circuit Examples: Offers examples of circuits where Si photodiodes can be applied, demonstrating their versatility.
13. Packaging Technology: Discusses different packaging options for Si photodiodes, including metal, ceramic, and plastic packages.
Key Features: Si photodiodes are noted for their excellent linearity, low noise, wide spectral response, mechanical ruggedness, compact size, and long life, used in diverse fields such as medical, analytical, scientific measurements, and optical communications.
Specifications: Lists several types of photodiodes and amplifiers with specific dimensions, frequency bandwidths, and conversion impedances.
Features: Key features include low noise, compact size, and ease of handling, with some models offering digital output functions and compatibility with RS-232C serial connections.
Applications: Suitable for spectrometric applications, X-ray detection, and high-energy particle detection.
Technical Terms: Explains terms related to photodiodes, such as spectral response, rise time, cut-off frequency, and noise equivalent power (NEP).
Operational Principles: Describes the principle of operation of photodiodes, including electron-hole pair formation and movement within the P-N junction.
Noise Reduction Techniques: Suggests measures to reduce electromagnetic noise and internal op amp noise in low-light-level detection circuits.
Conversion Circuits: Outlines the design of light-to-logarithmic-voltage conversion circuits.
Warranty and Liability: Hamamatsu disclaims warranties of merchantability or fitness for a particular purpose, with liability limited to the product's price.
Product Repair: Products may be repaired under warranty or a separate agreement, with some exceptions due to age or damage.
Product Usage: Products should be used by experienced individuals familiar with photoelectronics.
Contact Information: Provides contact details for Hamamatsu offices worldwide.
Main Products: Hamamatsu offers a range of products including Si photodiodes, APD, photo ICs, image sensors, X-ray sensors, infrared detectors, LEDs, optical communication devices, automotive devices, mini-spectrometers, and opto-semiconductor modules.
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Catalog excerpts

Si photodiodes-1

Selection Guide Lineup of Si photodiodes for UV to near IR, radiation

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Si photodiodes-2

Contents 1. Si photodiode for precision photometry · · · · · · · · · · · · · · · · · · · · · · · · · · · · For UV to near IR · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · For UV to near IR (IR sensitivity suppressed type) · · · · · · · · · · · · · · · · · · · · · · · Visible to near IR · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 1 2. Si photodiode for general photometry/visible range · · · · · · · · · · · · · · · · · For visible range · · · · · · · · · · · · · · · · · · · · · · · · · · · ·...

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Si photodiodes-3

Photodiodes are semiconductor light sensors that generate a current or voltage when the P-N junction in the semi- conductor is illuminated by light. The term photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors used to detect the intensity of light. Photodiodes can be classified by function and con- All of these types provide the following features and are widely used for the detection of the presence, intensity Excellent linearity with respect to incident light Wide spectral response range Mechanically rugged Long life Si photodiodes manufactured...

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Si photodiodes-4

1. Si photodiode for precision photometry These Si photodiodes have sensitivity in the UV to near IR range. Spectral response Dark current vs. reverse voltage

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Si photodiodes-5

* The S2281 series photodiodes connect to the C9329 photosensor amplifier (using a BNC-BNC cable E2573). Weak photocurrent from these photodiodes can be amplified with low noise. Dark current vs. reverse voltage

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Si photodiodes-6

For UV to near IR (IR sensitivity suppressed type) These Si photodiodes have suppressed IR sensitivity Spectral response Dark current vs. reverse voltage

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Si photodiodes-7

1. Si photodiode for precision photometry Spectral response Photo sensitivity Dark current Terminal capacitance VR=0 V Active area size Spectral response Dark current vs. reverse voltage REVERSE VOLTAGE (V) KSPDBOH/EE

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Si photodiodes-8

2. Si photodiode for general photometry/visible range Spectral response Peak sensitivity range wavelength Photosensitivity Da*^™lrt Active area size | Filter type (general use) These are Si photodiodes with visible-compensated filters. S8265 is a high humidity resistance type. | Filter type (CIE standard luminous spectral efficiency approximation) Spectral response

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Si photodiodes-9

Spectral response range Peak sensitivity Photo sensitivity Dark current Active area Spectral response

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Si photodiodes-10

3. High-speed response Si PIN photodiode Cut-off frequency: 1 GHz or more These Si PIN photodiodes deliver a wide bandwidth even with a low bias, making them ideal for high-speed photometry as well as optical communications. Spectral response Terminal capacitance vs. reverse voltage Frequency response

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Si photodiodes-11

Cut-off frequency: 500 MHz to less than 1 GHz S5972 delivers a wide bandwidth even with a low bias Cut-off frequency: 100 MHz to less than 500 MHz These Si PIN photodiodes have a large active area (cj>1.2 to cj>3.0 mm) yet deliver excellent frequency Spectral response Terminal capacitance vs. reverse voltage

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Si photodiodes-12

Cut-off frequency: 10 MHz to less than 100 MHz A wide variety of types are provided including a low-cost plastic package type and visible-cut type. Spectral response

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Si photodiodes-13

3. High-speed response Si PIN photodiode Spectral response Terminal capacitance vs. reverse voltage

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Si photodiodes-14

4. Multi-element type Si photodiode Segmented type photodiode These Si PIN photodiode arrays consist of 2 or 4 elements having sensitivity in the UV to near IR range. Active area size Photo sensitivity Cut-off frequency Terminal capacitance Spectral response

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Si photodiodes-15

One-dimensional photodiode array (UV to near IR: UV sensitivity enhanced type) These are Si photodiode linear arrays having rectangular elements equally spaced at a pitch of about 1 mm. size B°™nX /element pltch Spectral Photo response sensitivity range }^=Xp Dark current Terminal Glass epoxy Structure of active area (unit: mm) Details of elements (S4111 series)

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Si photodiodes-16

5. Surface mount type Si photodiode High-speed response Si PIN photodiode These are photodiodes sealed in a chip carrier package suitable for surface mounting and allowed solder reflow mounting on PC boards for automated processes. Segmented type photodiode These Si photodiodes consist of 2 or 4 elements and are integrated into a chip carrier package. Active area size Spectral Photo response sensitivity Cut-off Terminal capacitance Spectral response reverse voltage

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Si photodiodes-17

6. Si photodiode with preamp, TE-cooled type Si photodiode Si photodiode with preamp for measurement These are low noise photosensors incorporating a large area Si photodiode, op amp and feedback capacitance. Cooling temperature ∆T (˚C) Type No. Active area size (mm) Spectral response range (nm) Photo sensitivity (V/nW) λ=200 nm λ=960 nm 2.4 × 2.4 S8745-01 0.12 0.52 5.8 × 5.8 15 Metal 50 4 10 × 10 0.9 5.1 10 30 S9295-01 Photo 1 190 to 1100 S9295 Package 11 Non-cooled S8746-01 Built-in feedback resistance (GΩ) NEP λ=λp, f=10 Hz (fW/Hz1/2) 5 5.8 × 5.8 S9269 Non-cooled 12 340 to 1100 10 × 10 S9270...

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