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Si photodiodes S2387 series

Si photodiodes S2387 series

Product catalog summary

Overview: The S2387 series photodiodes by Hamamatsu are designed for high sensitivity in the visible to infrared range, suitable for general-purpose photometry. They are characterized by low dark current and high linearity, making them ideal for applications in analytical and optical measurement equipment.

Specifications: The series includes several models (S2387-16R, S2387-33R, S2387-66R, S2387-1010R, S2387-130R) with varying photosensitive area sizes and effective photosensitive areas. The absolute maximum ratings include a reverse voltage of 30V and operating temperatures ranging from -20°C to +60°C.

Electrical and Optical Characteristics: The photodiodes have a spectral response range from 340 nm to 1100 nm, with peak sensitivity at 960 nm. Photosensitivity varies across models, with typical values provided for short circuit current, dark current, and rise time. The noise equivalent power (NEP) is also specified for each model.

Performance Graphs: Graphs illustrate the spectral response and photosensitivity temperature characteristics, as well as the relationship between dark current and reverse voltage.

Dimensional Outlines: Detailed dimensional outlines are provided for each model, indicating the photosensitive area and package dimensions.

Additional Information: The document includes contact information for Hamamatsu offices worldwide and notes on product specifications, warranty, and usage guidelines.

Catalog excerpts

For visible to IR, general-purpose photometry High sensitivity in visible to infrared range Analytical equipment Optical measurement equipment, etc. High linearity Structure / Absolute maximum ratings Window material Resin potting Photosensitive area size Absolute maximum ratings Reverse Operating Storage voltage temperature temperature VR max Topr Tstg (V) (°C) (°C) Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Peak Spectral response sensitivity range wavelength λ λp Short circuit Dark Rise time Temp. current current tr coefficient Isc ID of ID VR=0 V 100 lx VR=10 mV TCID RL=1 kΩ Max. Noise Terminal Shunt equivalent capacitance resistance power Ct NEP Rsh VR=0 V VR=10 mV VR=0 V f=10 kHz λ=λp

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Photosensitivity temperature characteristic Dark current vs. reverse voltage (Typ. Ta=25 ˚C) Dark current

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Dimensional outlines (unit: mm) S2387-16R Anode terminal mark 4.5 ± 0.2 Anode terminal mark Photosensitive surface Resin Photosensitive surface The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0106EB Photosensitive surface Anode terminal mark 8.0 ± 0.3 Anode terminal mark The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0110EB The resin potting may extend a maximum of 0.1 mm above the upper surface of th

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Photosensitive surface The resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0117EB Information described in this material is current as of November, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which...

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