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Si photodiodes S1337 series

Si photodiodes S1337 series

Product catalog summary

Overview: The S1337 series photodiodes by Hamamatsu are designed for precision photometry across the UV to IR spectrum. They are particularly suitable for low-light-level detection in analytical and optical measurement equipment due to their high UV sensitivity and low capacitance.

Specifications: The photodiodes feature a spectral response range from 190 nm to 1100 nm, with peak sensitivity at 960 nm. They offer a photosensitivity of up to 0.52 A/W and a low dark current, making them efficient for detecting low light levels. The series includes various models with different photosensitive area sizes and package types, such as quartz and resin potting.

Absolute Maximum Ratings: The reverse voltage (VR max) is 5V, with operating temperatures ranging from -20°C to +60°C and storage temperatures from -20°C to +80°C. Exceeding these ratings may degrade product quality.

Electrical and Optical Characteristics: The photodiodes exhibit low noise equivalent power (NEP) and high shunt resistance, contributing to their precision in low-light conditions. The rise time and terminal capacitance vary across models, affecting their response speed and sensitivity.

Precautions: Exposure to UV light can degrade the photodiodes' characteristics, such as UV sensitivity and dark current. It is recommended to avoid direct UV exposure on the resin and to use an aperture to limit exposure to the photosensitive area.

Applications: These photodiodes are ideal for use in analytical equipment and optical measurement devices due to their high sensitivity and precision across a broad spectral range.

Dimensional Outlines: Detailed dimensional outlines are provided for each model, indicating the size and layout of the photosensitive areas and package dimensions.

Contact Information: Hamamatsu provides contact details for their offices worldwide, ensuring support and information accessibility for users.

Catalog excerpts

For UV to IR, precision photometry These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like. Analytical equipment Optical measurement equipment Structure / Absolute maximum ratings Window material Quartz Resin potting Quartz Resin potting Quartz Resin potting Quartz Resin potting Unsealed Effective photosensitive area Photosensitive area size (mm) Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR max (V) (°C) (°C) * Refer to “Precautions against UV light exposure.” Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral Peak response sensitivity range wavelength λ λp λp

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Spectral response S1337BQ series, S1337-21 Photosensitivity temperature characteristics (Typ. ) Dark current Dark current vs. reverse voltage

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Dimensional outlines (unit: mm) Photosensitive surface Photosensitive surface Quartz window Anode terminal mark Anode terminal mark 8.5 ± 0.2 8.5 ± 0.2 The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0106EB KSPDA0105EB 4.5 ± 0.2 Anode terminal mark Anode terminal mark Photosensitive surface Photosensitive surface Quartz window The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KS

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Photosensitive surface Photosensitive surface Quartz window Anode terminal mark 8.0 ± 0.3 Anode terminal mark The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0110EB Anode terminal mark 13.7 ± 0.3 Anode terminal mark Photosensitive surface Quartz window Photosensitive surface The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KS

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White ceramic White ceramic Photosensitive surface Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light...

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Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery...

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