Si photodiodes with preamp S8745-01/-06, S8746-01 Photodiode and preamp integrated with feedback resistance and capacitance The S8745-01 and S8746-01 are low-noise sensors consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, they can be used in low-light-level measurement such as analytical equipment and measurement equipment. The S8745-01 and S8746-01 are for ultraviolet to near infrared region, and the S8745-06 achieves high sensitivity in the visible to near infrared region. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Use low power consumption FET input operatonal amplifier Optical measurement equipment Variable gain with an externally connected resistor Low noise, low NEP Package with shielding effect Highly resistance to EMC noise The S8745-01/-06 and S8746-01 may be damaged by electro static discharge, etc. Please see precautions in the last page. Structure Parameter Photosensitive area Package Window material NEW  S8745-06 2.4 × 2.4 TO-5 Quartz glass Borosilicate glass Absolute maximum ratings (Ta=25 °C) Parameter Supply voltage (op amp) Power dissipation Operating temperature*1 Storage temperature*1 Symbol Vcc P Topr Tstg When there is a temperature difference between a product and the surrounding area in high humidity environments, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.

Si photodiodes with preamp Electrical and optical characteristics (Typ. Ta=25 °C, Vcc=±15 V, RL=1 MΩ, unless otherwise noted) Parameter Spectral response range Peak sensitivity wavelength Feedback resistance (built-in) Feedback capacitance (built-in) Output noise voltage ctral response Noise equivalent power Output offset voltage Cutoff frequency Output voltage swing Supply current λ=200 nm λ=λp Dark state, f=10 Hz Dark state, f=20 Hz λ=λp, f=10 Hz λ=λp, f=20 Hz Dark state -3 dB Dark state Dark state [Figure 1] Spectral response 0.7

Si photodiodes with preamp [Figure 2] Current-to-voltage conversion gain vs. frequency S8745-01 [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ] Current-to-voltage conversion gain (MΩ) Current-to-voltage conversion gain (MΩ) Current-to-voltage conversion gain (MΩ) [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ] S8746-01 +111 MΩ (External connected) +11 MΩ (External connected) (External connected) (External connected) The current-to-voltage conversion gain can be varied by connecting an external feedback resistor between pins 4 and 6 for the S8745-01/-06, and between pins 9 and...

Si photodiodes with preamp [Figure 3] Output noise voltage vs. frequency S8745-01 [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state] Output noise voltage vs. frequency +1 MΩ (External connected) 0.01 0.001 Output noise voltage (µV rms/Hz1/2) Output noise voltage (µV rms/Hz1/2) S8745-06 [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 M , dark state] (External connected) Output noise voltage (µV rms/Hz1/2) [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state] Output noise voltage and NEP (noise equivalent power) characteristics allow you to check whether the device...

Si photodiodes with preamp [Figure 4] NEP vs. frequency S8745-01 [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state, λ=λp] (External connected) +11 M (External connected) +111 M (External connected) [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 M , dark state, λ=λp] [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state, λ=λp]

Si photodiodes with preamp [Figure 5] Application circuit examples Application circuit example S8745-01/-06 Vcc+ RL RL is the input impedance to the next-stage circuit when viewed from the OUT terminal. 0.1 µF Application circuit example RL RL is the input impedance to the next-stage circuit when viewed from the OUT terminal. 0.1 µF

Si photodiodes with preamp The S8745-01/-06 and S8746-01 use a package with the guard ring effect provided. To make it effective during measurement, the nsional outline (unit: mm) (pin 5 for the S8745-01/-06; pins 5 and 11 for the S8746-01) should be connected to the ground line. package leads When a feedback resistor is externally connected, it is necessary to provide a guard ring on the circuit board or to provide a teflon Dimensional outline (unit: mm) standoff for the leads. Note: tantalum or ceramic capacitor of 0.1 to 10 μF must be connected to the supply voltage leads (pins 3 and 9 for...

Si photodiodes with preamp Precautions ESD The S8745-01/-06 and S8746-01 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions must be observed during use: ∙ To protect the device from electro static discharge which accumulate on the operator or the operator's...