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Si photodiode S8559
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Si photodiode S8559

Si photodiode S8559
1 /3Pages

Catalog excerpts

Si photodiode S8559-1

Detector for X-ray monitor Si photodiode coupled to low cost CsI scintillator X-ray detection Ideal for detection of X-ray energy below 100 keV X-ray monitors Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Electrical and optical characteristics (without scintillator, Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance X-ray sensitivity (reference value, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 mm) X-ray tube voltage 120 kV Note) Depends on equipment and measurement conditions. Handling precautions Avoid storing or using S8559 at high humidity because CsI scintillator has deliquescence.

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Si photodiode S8559-2

Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage Terminal capacitance Dimensional outline (unit: mm) Photosensitive surface 0.5 Lead 9.2 ± 0.3 Anode terminal mark Dark current

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Si photodiode S8559-3

Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of August 2020. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery...

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