Si photodiode S2551
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Si photodiode S2551
1 /4Pages
Catalog excerpts
For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry. Long, narrow active area: 1.2 × 29.1 mm Analytical instruments High sensitivity Optical measurement equipment Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temperature coefficient of ID Rise time Terminal capacitance Shunt resistance Noise equivalent power
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Photo sensitivity temperature characteristic Rise time vs. load resistance Dark current vs. reverse voltage Dark current Rise time
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Shunt resistance vs. ambient temperature (Typ. VR=10 mV) 100 GΩ 10 GΩ Dimensional outline (unit: mm) 40.0 ± 0.7 Shunt resistance Photosensitive surface The resin potting may extend a maximum of 0.1 mm beyond the upper surface of the package. KS
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Information described in this material is current as of February 2019. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and...
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