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Si photodiode S2551

Si photodiode S2551

Product catalog summary

Overview: The S2551 is a silicon photodiode designed for precision photometry in the visible to infrared spectrum. It features a long, narrow active area of 1.2 × 29.1 mm, high sensitivity, and low capacitance, making it suitable for analytical instruments and optical measurement equipment.

Absolute Maximum Ratings: The photodiode has a maximum reverse voltage of 30 V, an operating temperature range of -20 to +60 °C, and a storage temperature range of -20 to +80 °C. Exceeding these ratings may impair product quality.

Electrical and Optical Characteristics (at 25 °C):

Spectral response range: 340 to 1060 nm
Peak sensitivity wavelength: 920 nm
Photo sensitivity: 0.57 A/W at peak wavelength, 0.37 A/W at 663 nm
Short circuit current: 24 to 30 μA at 100 lx
Dark current: Max 1 nA at 10 mV reverse voltage
Temperature coefficient of dark current: 1.15 times/°C
Rise time: 1.4 μs at 0 V reverse voltage and 1 kΩ load resistance
Terminal capacitance: 350 pF at 0 V reverse voltage and 10 kHz frequency
Shunt resistance: 0.01 to 0.03 GΩ at 10 mV reverse voltage
Noise equivalent power: 3.9 × 10^-14 W/Hz^1/2 at peak wavelength

Features: The S2551 photodiode is characterized by its long, narrow active area, high sensitivity, and low capacitance, making it ideal for precision photometry applications.

Applications: The photodiode is suitable for use in analytical instruments and optical measurement equipment.

Dimensional Outline: The photodiode has a lead and active area dimension of 1.2 × 29.1 mm, with a resin potting that may extend up to 0.1 mm beyond the package surface.

Additional Information: The document includes graphs illustrating spectral response, photo sensitivity temperature characteristics, rise time vs. load resistance, dark current vs. reverse voltage, and shunt resistance vs. ambient temperature. The product specifications are subject to change, and the warranty is valid for one year, limited to repair or replacement for defects reported within that period.

Catalog excerpts

For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry. Long, narrow active area: 1.2 × 29.1 mm Analytical instruments High sensitivity Optical measurement equipment Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temperature coefﬁcient of ID Rise time Terminal capacitance Shunt resistance Noise equivalent power

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Photo sensitivity temperature characteristic Rise time vs. load resistance Dark current vs. reverse voltage Dark current Rise time

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Shunt resistance vs. ambient temperature (Typ. VR=10 mV) 100 GΩ 10 GΩ Dimensional outline (unit: mm) 40.0 ± 0.7 Shunt resistance Photosensitive surface The resin potting may extend a maximum of 0.1 mm beyond the upper surface of the package. KS

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Information described in this material is current as of February 2019. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and...

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