Si photodiode S15289-33
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Catalog excerpts

Si photodiode S15289-33 - 1

High UV resistant and back-illuminated Si photodiode with CSP structure The S15289-33 is a back-illuminated type Si photodiode that has achieved high reliability for monitoring ultraviolet light. It exhibits low sensitivity deterioration under UV light irradiation and is suitable for applications such as monitoring intense UV light sources. It is designed with minimal dead space around the product. This makes it possible to arrange multiple products side by side. High sensitivity in UV region: QE=75% (λ=200 nm) Light level monitor for UV light source High reliability in UV light irradiation Analytical instruments Compatible with lead-free solder reflow Optical measurement equipment Structure Parameter Package size Chip size Photosensitive area Package Window material Specification 3×3 2.8 × 2.8 2.5 × 2.5 Glass epoxy None Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Soldering temperature Symbol VR Topr Tstg Tsol *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: Reflow soldering, JEDEC J-STD-020 MSL 5a, see P.4 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Short circuit current Dark current Temperature coefficient of ID Rise time Terminal capacitance Shunt resistance Noise equivalent power

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Si photodiode S15289-33 - 2

Spectral response C hanges to spectral sensitivity due to UV light irradiation (Typ. Ta=25 °C) Relative sensitivity to the initial value (%) (Typ. Ta=25 °C, D2 lamp: 30 W, irradiation distance: approx. 70 mm, irradiation time: 1000 h) Previous product 60 Dark current vs. reverse voltage nsitivity temperature characteristics 0.2 0.1 Sensitivity temperature characteristics Dark current Dark current vs. reverse voltage

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Si photodiode S15289-33 - 3

Terminal capacitance vs. reverse voltage Sensitivity uniformity (Typ. Ta=25 °C, λ=405 nm, light spot size= 20 µm, VR=0 V) Relative sensitivity (%) Terminal capacitance Dimensional outline (unit: mm) 3.0 ± 0.1 (2.8) Photosensitive surface (0.1) Cathode Anode Tolerance unless otherwise noted: ±0.15 KSPDA0222EA Recommended land pattern (unit: mm) 2.2

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Si photodiode S15289-33 - 4

Recommended temperature profile for reflow soldering Precautions against UV light exposure ⸱ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, operating time, and operating environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. Recommended...

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