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Si photodiode S1087/S1133 series
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Si photodiode S1087/S1133 series

Si photodiode S1087/S1133 series
1 /5Pages

Catalog excerpts

Si photodiode S1087/S1133 series-1

Ceramic package photodiodes with low dark current The S1087/S1133 series are ceramic package photodiodes that offer low dark current. Ceramic package used is lightimpervious, so no stray light can reach the photosensitive area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light levels to high light levels. S1087, S1133 : For visible range S1087-01, S1133-01 : For visible to IR range S1133-14 : For visible to near IR range Exposure meters Illuminometers Copiers Display light control Optical switches Structure /Absolute maximum ratings Absolute maximum ratings Type no. Dimensional outline/ Window material*1 Photosensitive area size (mm) Storage temperature Tstg (°C) Operating temperature Topr *1: Window material R=resin coating, V=visual-compensation filter *2: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral response range λ Peak sensitivity wavelength λp Shunt Photosensitivity Dark Terminal Short Rise Temp. Temp. S current Infrared circuit time capacitance resistance coefficient coefficient Rsh (A/W) ID Ct sensitivity current tr of of VR=10 mV VR=0 V Isc ratio VR=1 V TCID VR=0 V GaP He-Ne Isc RL=1 kΩ f=10 kHz Min. Typ. 100 lx max. LED laser λp (GΩ) (GΩ) (pA) (times/°C) (μs) (pF) 560 nm 633 nm (%) (μA) (%/°C) 0.3 0.3 0.19 10 0.16 -0.01 0.5 200 250 0.58 0.33 0.38 1.3 0.1 10 1.12 10 0.3 0.3 0.19 10 0.61 -0.01 2.5 700 100 0.58 0.38 5.4 0.33 0.1 0.4 0.37 3.1 20 0.5 200 50

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Si photodiode S1087/S1133 series-2

Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 °C) Rise time vs. load resistance Dark current vs. reverse voltage Dark current Rise time

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Si photodiode S1087/S1133 series-3

Shunt resistance temperature characteristics Short circuit current linearity (Typ. Ta=25 °C, “A” light source fully illuminated) Short circuit current (A) Shunt resistance Incident light level (lx) KSPDB0122EA (Typ. Ta=25 °C, light source: tungsten lamp) (Typ. Ta=25 °C, light source: tungsten lamp) Relative sensitivity (%)

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Si photodiode S1087/S1133 series-4

Dimensional outlines (unit: mm) (1) S1087 (2) S1087-01 Cathode Indicator hole Photosensitive surface Photosensitive surface Cathode Indicator hole Tolerance unless otherwise noted: ±0.15 Tolerance unless otherwise noted: ±0.15 (4) S1133-01/-14 Cathode Indicator hole Cathode Indicator hole +0 Photosensitive surface Photosensitive surface Tolerance unless otherwise noted: ±0.15 Tolerance unless otherwise noted: ±0.15 KSPDA0

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Si photodiode S1087/S1133 series-5

Recommended soldering conditions Parameter Solder temperature Specification 260 °C max. (once, less than 5 s) Remarks at least 2 mm away from lead roots Note: When setting the soldering conditions, check for any problems by testing out the soldering methods in advance. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, Ceramic, Plastic products / Precautions Information described in this material is current as of April 2021. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully...

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