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Si photodiode S10043

Si photodiode S10043
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Highly reliable photodiode for VUV detection The S10043 is a Si photodiode designed to detect high-power ArF excimer lasers (193 nm) with high accuracy and stability. By combining our newly developed technologies for forming ultra-thin PN junctions and high-reliability ultra-thin metal ﬁlms, the S10043 shows almost no change in sensitivity even after exposure to ArF excimer laser beam of 1 kJ/cm2. Greatly improved sensitivity stability even after exposure to ArF (λ=193 nm) excimer laser ArF excimer laser detection Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature*2 Storage temperature*2 Symbol VR max Topr Tstg *1: The S10043 uses a windowless package with no protection on the photodiode chip, and is shipped with the package held with glass tape. Remove the glass tape when using. *2: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Spectral response range λ Peak sensitivity wavelength λp Photosensitivity S λ=193 nm Dark current ID VR=10 mV Terminal capacitance Ct VR=0 V, f=10 kHz VR=0 V, RL=1 kΩ Rise time tr 10 to 90%

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Spectral response Variation in sensitivity due to VUV exposure [Typ. Ta=25 ˚C, ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz, λ=193 nm, pulse width=15 ns (FWHM)] Relative sensitivity (%) 40 S1227/S1337 series (unsealed product) 20 Dimensional outline (unit: mm) 16.5 ± 0.2 Photosensitive surface Black ceramic (2 ×) ϕ0.5 Fe·Ni·Co alloy 15.1 ± 0.3 Anode terminal mark Chip position accuracy with respect to the package center -0.3≤X, Y≤+

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Handling precautions · Handle the photodiodes in a clean room. · Never touch the photodiode chip surface and wire bonding. · Wear dust-proof gloves and dust-proof mask. · Use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface. · Do not clean the photodiodes by any method other than air blow. Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation...

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