Si photodiode 8193
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Catalog excerpts

Si photodiode 8193 - 1

Detector for X-ray monitors Features High sensitivity, high reliability photodiode with ceramic scintillator X-ray analysis, X-ray detection High X-ray sensitivity: 1.8 times that of CWO Less afterglow than CsI: <0.1%/3 ms, <0.01%/30 ms Unlike CsI, has no deliquescence Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR max Topr Tstg Electrical and optical characteristics (without scintillator, Ta=25°C) Parameter Spectral response range Peak sensitivity wavelength Dark current Terminal capacitance X-ray sensitivity (reference value, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 mm) X-ray tube voltage 120 keV Note: Depends on equipment and measurement conditions

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Si photodiode 8193 - 2

Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) Terminal capacitance Dark current Dimensional outline (unit: mm) Photosensitive surface Anode terminal mark

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Si photodiode 8193 - 3

Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Information described in this material is current as of September 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The...

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