■ Selection guide - March 2014 (Avalanche Photodiode) High-speed, high sensitivity photodiodes having an internal gain mechanism

Si APD High-speed, high sensitivity photodiodes having an internal gain mechanism Short wavelength type Si APD · · · · · · · · · · · · · · · 5 · Low-bias operation· · · · · · · · · · · · · · · · · · · · · · · · · 5 · Low terminal capacitance · · · · · · · · · · · · · · · · · · · 6

Near infrared type Si APD· · · · · · · · · · · · · · · · · · · 7 · 900 nm band, low terminal capacitance · · · · · · 10 · 1000 nm band, high sensitivity · · · · · · · · · · · · · · 10

Si APD (avalanche photodiode) The APD is a high-speed, high-sensitivity photodiode that internally multiplies photocurrent when reverse voltage is applied. The APD, having a signal multiplication function inside its element, achieves higher S/N than the PIN photodiode and can be used in a wide range of applications such as high-accuracy rangefinders and low-light-level detection that use scintillators. Though the APD can detect lower level light than the PIN photodiode, it does require special care and handling such as the need for higher reverse voltage and more detailed consideration of its...

55 Near infrared type (1000 nm band/high sensitivity) Near infrared type (Low-bias operation) Near infrared type (Low temperature coefficient) Short wavelength type (Low-bias operation) Short wavelength type (Low terminal capacitance) Near infrared type (900 nm band, low terminal capacitance) Cutoff frequency vs. recommended wavelength (photosensitive area size compared at 0.5 mm) 1000 Near infrared type Low-bias operation Low temperature coefficient ) Near infrared type (1000 nm band/high sensitivity) Short wavelength type (Low terminal capacitance) Near infrared type Short wavelength type (Low-bias...

Short wavelength type Si APD These are short wavelength Si APDs with enhanced sensitivity in the UV to visible region. They offer high gain, high sensitivity, and low noise in the short wavelength region. They are suitable for applications such as low-light-level measurement and analytical instruments. Low-bias operation Effective*1 photosensitive area (mm) Spectral response range (nm) Breakdown Temp. Cutoff*2 voltage coefficient of frequency max. breakdown RL=50 Ω ID=100 μA voltage (V/°C) (MHz) (V) *1: Area in which a typical gain can be obtained *2: Value obtained when operated at the gain...

Short wavelength type Si APD Low terminal capacitance Effective*1 photosensitive area (mm) Spectral response range (nm) Temp. coefficient of breakdown voltage (V/°C) 4 × 8 element array Cutoff*2 frequency RL=50 Ω Temp. coefficient of breakdown voltage (V/°C) Spectral response range (nm) *1: Area in which a typical gain can be obtained *2: Value obtained when operated at the gain indicated in the table Spectral response Quantum efficiency vs. wavelength (Typ. M=50 at 420 nm) Quantum efficiency (%) Gain vs. reverse voltage

Near infrared type Si APD Low-bias operation These are near infrared Si APDs that operate with low bias voltage. Since high gain can be attained with a bias voltage of 200 V or less, they are suitable for applications such as FSO, laser radar, and optical fiber communication. Spectral response range Temp. coefficient of breakdown voltage (V/°C) Surface mount type The S10341 series is a low cost, small size Si APD with a surface-mount plastic package suitable for mass production. Spectral response range *1: Area in which a typical gain can be obtained *2: Value obtained when operated at the gain...

Near infrared type Si APD Spectral response Quantum efficiency vs. wavelength (Typ. Ta=25 °C, M at 800 nm) Quantum efficiency (%) Gain vs. reverse voltage (Typ. λ=800 nm)

Low temperature coefficient These are near infrared Si APDs featuring low temperature coefficient of the bias voltage. They produce stable gain over a wide temperature range. They are suitable for applications such as FSO, laser radar, and optical fiber communication. Effective*1 photosensitive area (mm) Spectral response range (nm) Temp. coefficient of breakdown voltage (V/°C) *1: Area in which a typical gain can be obtained *2: Value obtained when operated at the gain indicated in the table Spectral response Quantum efficiency vs. wavelength (Typ. Ta=25 °C) Quantum efficiency (%) Gain vs. reverse...

Near infrared type Si APD 900 nm band, low terminal capacitance This series is used in laser radar and other applications. It features a gradual curve of gain versus reverse voltage curve, providing stable operation. Effective*1 photosensitive area (mm) Spectral response range (nm) Temp. coefficient of breakdown voltage (V/°C) *1: Area in which a typical gain can be obtained *2: Value obtained when operated at the gain indicated in the table 1000 nm band, high sensitivity The S11519 series incorporates MEMS technology to enhance the sensitivity in the near IR region for YAG laser (1.06 μm) detection....

APD modules Standard type The APD module consists of an amplifier and bias power supply assembled in a compact form to facilitate the use of the Si APD. Running on a +5 V power supply, it can be used for a variety of light detection applications up to 100 MHz of frequency bandwidth. Near infrared type Features Peak sensitivity wavelength: 800 nm Wide bandwidth Optical fiber adapters are also available (sold separately). Effective* photosensitive area Si APD evaluation FSO Barcode readers Laser radars Optical rangefinders Optical communication Cutoff frequency Photoelectric conversion sensitivity...