Catalogs >
HAMAMATSU >
Si APD S14645 series

Si APD S14645 series
1 / 6Pages

Catalog excerpts

Si APD S14645 series High speed, compact Si APD for LiDAR (900 nm band) featuring low-bias operation This Si APD is suitable for detecting light in the 900 nm band, which is increasingly used in optical rangefinders. With the same shape as the previous product (S12926 series), this Si APD features less variation in breakdown voltage, reduced dark current, and expanded storage and operating temperatures. Optical rangefinders Peak sensitivity wavelength: 840 nm (M=100) Low bias operation: Breakdown voltage=195 V max. H igh-speed response: Cutoff frequency=600 MHz typ. (λ=900 nm, M=100) Reduction of breakdown voltage variation: 175 ± 20 V Structure Parameter Photosensitive area size*1 Effective photosensitive area Package Plastic (silicone resin) *1: Photosensitive area in which a typical gain can be obtained Absolute maximum ratings Parameter Operating temperature*2 Storage temperature*2 Reverse current (DC) Forward current Soldering temperature Symbol Topr Tstg IR max IF max Tsol When there is a temperature difference between a product and the surrounding area in high humidity environments, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *3: Reflow soldering, JEDEC J-STD-020 MSL 2a, see P.4 Note: xceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the E product within the absolute maximum ratings.

Open the catalog to page 1

Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Quantum efficiency Spectral response Breakdown voltage Temperature coefficient of VBR Dark current Temperature coefficient of ID Cutoff frequency Terminal capacitance Excess noise figure Gain Spectral response Quantum efficiency (%) Quantum efficiency vs. wavelength

Open the catalog to page 2

Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage Gain vs. reverse voltage (Typ. λ=900 nm)

Open the catalog to page 3

(Typ. M=100, light source: tungsten lamp) 0° 10° 20° 30° 70° Recommended solder reflow conditions (typical example) 80° Recommended solder reflow conditions Peak temperature - 5 °C 30 s max. Cooling 6 °C/s max. Peak temperature 260 °C max. Temperature increase 3 °C/s max. ∙ A f ter unpacking, store it an enviroment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 4 weeks. ∙ he effect that the product receives during reflow T soldering varies depending on the circuit board and the reflow oven that are used. ∙ When you set reflow soldering...

Open the catalog to page 4

Dimensional outline (unit: mm) Dimensional outline (unit: mm) 0.3 Cathode mark Photosensitive surface Recommended land pattern Position accuracy of photosensitive area: X, Y ≤ ±0.2 Tolerance unless otherwise noted: ±0.2 Standard packing specifications ndard packing specifications Reel (conforms to JEITA ET-7200) Outer diameter 180 mm Electrostatic characteristics Conductive Embossed tape (unit: mm, material: PS, conductive) Packing quantity 1000 pcs/reel Packing type Reel and desiccant in moisture-proof packaging (vaccum-sealed)

Open the catalog to page 5

Related products Products with on-chip filter that transmits near infrared light (850 to 950 nm) are also available. Spectral responce (Typ. Ta=25 °C, M=100 at λ=900 nm) Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Surface mount type products KAPDB0436EB Information described in this material is current as of January 2021. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there...

Open the catalog to page 6