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Si APD S14644 series

Si APD S14644 series

Si APD S14644 series

Product catalog summary
Overview: The S14644 series is a compact, surface mount type Silicon Avalanche Photodiode (Si APD) designed for high sensitivity in the 800 nm band, suitable for optical rangefinders used in consumer electronics and industrial applications.
Specifications:
  • Photosensitive area: ϕ0.2 mm for S14644-02 and ϕ0.5 mm for S14644-05.
  • Effective photosensitive area: 0.03 mm² for S14644-02 and 0.19 mm² for S14644-05.
  • Package: Glass epoxy with silicone resin.
Absolute Maximum Ratings:
  • Reverse current (DC): 0.2 mA.
  • Forward current: 10 mA.
  • Operating temperature: -30 to +100 °C.
  • Storage temperature: -40 to +100 °C.
  • Soldering temperature: 260 °C (up to 3 times).

Note: Exceeding these ratings may degrade product quality.

Features:
  • Small package dimensions: 3.1 × 1.8 × 1.0 mm.
  • Peak sensitivity wavelength: 800 nm with a gain of 100.
  • Low-bias operation with a breakdown voltage of 180 V max.
  • High-speed response with a cutoff frequency of 1 GHz.
  • Breakdown voltage variation: 160 ± 20 V.
Electrical and Optical Characteristics:
  • Spectral response range: 400 to 1000 nm.
  • Peak sensitivity wavelength: 800 nm.
  • Photosensitivity at 800 nm: 0.52 A/W.
  • Quantum efficiency at 800 nm: 80%.
  • Breakdown voltage: 140 to 180 V.
  • Dark current: 30 to 500 pA depending on the model.
  • Cutoff frequency: 1 to 1.2 GHz.
Graphs and Charts:
  • Spectral response and quantum efficiency graphs show performance across wavelengths from 400 to 1000 nm.
  • Terminal capacitance and dark current are plotted against reverse voltage, indicating performance stability across different voltages.
  • Gain vs. reverse voltage graph illustrates gain stability across temperatures from -20 °C to 100 °C.
Packaging and Handling:
  • Standard packing: 1000 pcs/reel in moisture-proof packaging.
  • Reflow soldering conditions: Preheat for 60 to 120 seconds, soldering for 60 to 150 seconds, with a peak temperature of 260 °C.
Precautions:
  • Ensure no dew condensation occurs on the product surface to prevent deterioration.
  • Store unpacked devices at temperatures below 30 °C and humidity below 60%.
Contact Information: For further details, contact Hamamatsu Photonics offices worldwide.
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Catalog excerpts

Si APD S14644 series-1

High speed, compact Si APD for LiDAR (800 nm band) featuring low-bias operation The S14644 series is a compact, surface mount type Si APD that achieves high sensitivity in the 800 nm band. This is suitable for laser monitoring of optical rangefinders widely used from consumer electronics to industrial use. Optical rangefinders Peak sensitivity wavelength: 800 nm (M=100) Low-bias operation: Breakdown voltage=180 V max. H igh-speed response: Cutoff frequency=1 GHz typ. (λ=800 nm, M=100) Reduction of breakdown voltage variation 160 ± 20 V Structure Parameter Photosensitive area*1 Effective photosensitive area Package Glass epoxy (silicone resin) *1: Photosensitive area in which a typical gain can be obtained Absolute maximum ratings Parameter Reverse current (DC) Forward current Operating temperature*2 Storage temperature*2 Soldering temperature Symbol IR max IF max Topr Tstg Tsol When there is a temperature difference between a product and the surrounding area in high humidity environments, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *3: Reflow soldering, JEDEC J-STD-020 MSL 2a, see P.5 Note: xceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the E product within the absolute maximum ratings.

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Si APD S14644 series-2

Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Quantum efficiency Breakdown voltage Temperature coefficient of Spectral response breakdown voltage Dark current Temperature coefficient of dark current Quantum efficiency 0.63 vs. wavelength - Cutoff frequency Terminal capacitance Excess noise figure Gain Spectral response Quantum efficiency vs. wavelength Quantum efficiency (%)

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Si APD S14644 series-3

Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage Gain vs. reverse voltage (Typ. λ=800 nm)

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Si APD S14644 series-4

(Typ. M=100, light source: tungsten lamp) 0° 10° 20° 30° Dimensional outline Dimensional outline (unit: mm) Photosensitive area A Cathode mark Photosensitive surface (0.4) Photosensitive area position accuracy: X, Y≤±0.2 Recommended land pattern Type no. Tolerance unless otherwise noted: ±0.2

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Si APD S14644 series-5

Standard packing specifications ndard packing specifications Reel (conforms to JEITA ET-7200) Outer diameter ϕ180 mm Electrostatic characteristics Conductive Embossed tape (unit: mm, material: PS, conductive) 1.75 ± 0.1 Recommended reflow soldering condition KPINC0023EB Packing quantity Packing type Reel and desiccant in moisture-proof packaging (vacuum-sealed) Recommended reflow soldering conditions 300 °C Peak temperature - 5 °C 30 s max. Cooling 6 °C/s max. ∙ fter unpacking, store the device in an environment A at a temperature of 30 °C or less and a humidity of 60% or less, and perform reflow...

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Si APD S14644 series-6

Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Surface mount type products Technical information ‧ Si photodiodes / Technical note Information described in this material is current as of March 2021. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check...

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.