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Si APD S14124-20
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Si APD S14124-20

Si APD S14124-20
1 /3Pages

Catalog excerpts

Si APD S14124-20-1

High-sensitivity Si APD for detection of light with a wavelength of 266 nm The S14124-20 is an improved Si APD from the S8664 series for highly sensitive detection of light with a wavelength of 266 nm used in semiconductor inspection and laser processing equipment. We have achieved a quantum efficiency of 87% at λ=266 nm. Semiconductor inspection system Laser processing equipment Photomask defect inspection system High gain Structure Parameter Photosensitive area Package Window material Specification ϕ2.0 TO-8 AR-coated quartz Absolute maximum ratings (Ta=25 °C) Parameter Forward current Reverse current (DC) Operating temperature Starage temperature Soldering conditions Symbol IF max IR max Topr Tstg - Valu 10 200 -20 to +60 -55 to +100 260 °C or less, within 10 s *1: When there is a temperature difference between a product and the surounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Peak sensitivity wavelength Quantum efficiency Breakdown voltage Temperature coefficient of breakdown voltage Dark current Temperature coefficient of dark current Symbol λp QE VBR ∆TVBR ID ∆TID Cutoff frequency Terminal capacitance Excess noise index Gain

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Si APD S14124-20-2

Quantum efficiency vs. wavelength Dark current vs. reverse voltage Dark current Quantum efficiency (%) 1 reverse voltage Terminal capacitance vs. nA Gain vs. reverse voltage Terminal capacitance vs. reverse voltage Terminal capacitance

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Si APD S14124-20-3

ensional outline (unit: mm) Dimensional outline (unit: mm) Photosensitive area Photosensitive surface Index mark Tolerance unless otherwise noted: ±0.2 Distance from photosensitive area center to cap center -0.4≤X≤+0.4 -0.4≤Y≤+0.4 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Information described in this material is current as of March 2022 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained...

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