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Si APD S14124-20

Si APD S14124-20

Si APD S14124-20

Product catalog summary
Overview: The S14124-20 is a high-sensitivity Silicon Avalanche Photodiode (Si APD) designed for detecting light at a wavelength of 266 nm. It is an improved version from the S8664 series, primarily used in semiconductor inspection and laser processing equipment.
Specifications:
  • Photosensitive area: ϕ2.0 mm
  • Package: TO-8
  • Window material: AR-coated quartz
Absolute Maximum Ratings (at 25°C):
  • Forward current: 10 mA
  • Reverse current (DC): 200 µA
  • Operating temperature: -20 to +60 °C
  • Storage temperature: -55 to +100 °C
  • Soldering conditions: 260 °C or less, within 10 seconds
Note: Exceeding these ratings may degrade product quality.
Electrical and Optical Characteristics (at 25°C):
  • Peak sensitivity wavelength: 600 nm
  • Quantum efficiency: 70-87% at λ=266 nm
  • Breakdown voltage: 360-500 V
  • Dark current: 3-10 nA
  • Cutoff frequency: 250 MHz
  • Terminal capacitance: 11 pF
  • Gain: 50 to 400
Features:
  • High sensitivity with 87% quantum efficiency at 266 nm
  • Low capacitance and noise
  • High gain
Applications:
  • Semiconductor inspection systems
  • Laser processing equipment
  • Photomask defect inspection systems
Graphs and Data:
  • Quantum efficiency vs. wavelength: Shows efficiency peaking at 266 nm.
  • Dark current vs. reverse voltage: Illustrates the relationship between dark current and voltage.
  • Gain vs. reverse voltage: Demonstrates gain variation with voltage at different temperatures.
  • Terminal capacitance vs. reverse voltage: Displays capacitance changes with voltage.
Precautions: Ensure no dew condensation occurs as it may affect product reliability. Always use within specified ratings.
Contact Information: Hamamatsu Photonics provides contact details for various global offices for further inquiries.
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Catalog excerpts

Si APD S14124-20-1

High-sensitivity Si APD for detection of light with a wavelength of 266 nm The S14124-20 is an improved Si APD from the S8664 series for highly sensitive detection of light with a wavelength of 266 nm used in semiconductor inspection and laser processing equipment. We have achieved a quantum efficiency of 87% at λ=266 nm. Semiconductor inspection system Laser processing equipment Photomask defect inspection system High gain Structure Parameter Photosensitive area Package Window material Specification ϕ2.0 TO-8 AR-coated quartz Absolute maximum ratings (Ta=25 °C) Parameter Forward current Reverse current (DC) Operating temperature Starage temperature Soldering conditions Symbol IF max IR max Topr Tstg - Valu 10 200 -20 to +60 -55 to +100 260 °C or less, within 10 s *1: When there is a temperature difference between a product and the surounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Peak sensitivity wavelength Quantum efficiency Breakdown voltage Temperature coefficient of breakdown voltage Dark current Temperature coefficient of dark current Symbol λp QE VBR ∆TVBR ID ∆TID Cutoff frequency Terminal capacitance Excess noise index Gain

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Si APD S14124-20-2

Quantum efficiency vs. wavelength Dark current vs. reverse voltage Dark current Quantum efficiency (%) 1 reverse voltage Terminal capacitance vs. nA Gain vs. reverse voltage Terminal capacitance vs. reverse voltage Terminal capacitance

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Si APD S14124-20-3

ensional outline (unit: mm) Dimensional outline (unit: mm) Photosensitive area Photosensitive surface Index mark Tolerance unless otherwise noted: ±0.2 Distance from photosensitive area center to cap center -0.4≤X≤+0.4 -0.4≤Y≤+0.4 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Information described in this material is current as of March 2022 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained...

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