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Pulsed Laser Diode L11854-307-05/-55

Pulsed Laser Diode L11854-307-05/-55

Pulsed Laser Diode L11854-307-05/-55

Product catalog summary
Overview
The document describes a multi-mode pulsed laser diode, model L11854-307-05/-55, which provides high light output from a light-emitting area of 70 µm × 10 µm. It is packaged in a φ5.6 metal can, with other package types available. Applications include laser range finders, security, and monitoring.

Specifications
The laser diode operates under specific conditions: a pulse width of 50 ns, repetition frequency of 1 kHz, and an operating temperature of 25 °C. Key parameters include a peak radiant power of ≥21 W, a peak emission wavelength of 905 nm, and an emitting area of 70 µm × 10 µm.

Absolute Maximum Ratings
- Pulse forward current (Ifp): 10 A
- Reverse voltage (Vr): 6 V
- Operating temperature (Top(c)): -40 to +85 °C
- Storage temperature (Tstg): -40 to +100 °C
- Soldering conditions: 260 °C for up to 5 seconds

Features and Applications
The laser diode is suitable for LiDAR and 3D sensing applications. It offers a sharp and stable near-field pattern (NFP).

Safety and Handling
The laser diode is classified as a Class 3B laser product according to IEC 60825-1, emitting invisible laser radiation that can cause eye or skin damage. Safety measures include using protective goggles and ensuring proper labeling.

Handling Precautions
The laser diode is sensitive to electrostatic discharges (ESDS). Precautions include using grounded conductive sheets, wrist straps, and maintaining humidity around 50%. Soldering should be done with a grounded iron at temperatures below 260 °C for less than 5 seconds.

Protection Against Overvoltage and Overcurrent
Exceeding maximum ratings can cause immediate breakdown. Protection circuits such as resistors, diodes, or capacitors should be used to prevent excess voltage, current, and reverse voltage.

Cleaning and Maintenance
To maintain output power, clean the output window with ethyl alcohol using a clean gauze or cotton swab. Avoid cleaning other parts of the laser diode.

Contact Information
For further details, contact Hamamatsu Photonics at their various international offices.
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Catalog excerpts

Pulsed Laser Diode L11854-307-05/-55-1

Pulsed Laser Diode L11854-307-05/-55 I Features G 3 stack pulsed laser diode G Wavelength: 905 nm G Peak radiant power: ≥21 W G Emiting area : 70 µm × 10 µm G Sharp and stable Near filed pattern (NFP) I Applications G LiDAR G 3D sensing This multi-mode laser provides high light output from the light emitting area of 70 µm × 10 µm. The standard PKG is φ5.6 metal can packages, and other cans package types are also available. It can be used for various applications such as laser range finder, security, and monitoring. I Absolute maximum rating Parameter Pulse forward current Reverse voltage (DC) Pulse width Duty ratio Operating temperature Storage temperature Soldering conditions Symbol Ifp Vr tw DR Top(c) Tstg Tsol Peak radiant power Operating voltage Peak emission wavelength Spectral width Rise time Wavelength temperature coefficient Horizontal Beam spread angle Vertical Threshold current Emitting area Horizontal Optical axis tilt *1 Vertical Position accuracy of emission point *2 Ifp = 7 A FWHM — Designing value *1 Optical axis tlit is based on the bottom of the package base. *2 The emitting point position accuracy is based on the package base center. * Driving conditions: Pulse width tw = 50 ns, repetition frequency fr =

 Open the catalog to page 1
Pulsed Laser Diode L11854-307-05/-55-2

Pulsed Laser Diode L11854-307-05/-55 Figure 1: Peak radiant power - pulse forward current and operating voltage vs. pulse forward current (example) tw=50 ns, fr=1 kHz, Top(c)=25 °C Relative radiant power (%) Peakl radiant power Φep (W) Figure 2: Emission spectrum (example) Pulse forward current Ifp (A) Figure 4: Center wavelength temperature characteristics (example) Reference peak output relative value at 25 °C (%) Figure 3: Relative light output temperature characteristics (example) Figure 5: Directivity (example) Figure 6: NFP near field pattern (example) Relative radiant power (%)

 Open the catalog to page 2
Pulsed Laser Diode L11854-307-05/-55-3

Pulsed Laser Diode L11854-307-05/-55 Figure 7: Short-pulse operation using laser driver board C14518 (example) 100 90 Relative radiant power (%) Figure 8: Dimensions (unit: mm) +0.01 Window glass FFP Horizontal and vertical orientation to package (front view) φ5.6 PKG No connection LD cathode LD anode (case) No connection LD anode LD cathode (case) DANGER (Class 3B Laser) Invisible Laser Radiation – Avoid Exposure to Beam GExposure to the Laser Beam The LD emits invisible laser radiation. The instrument which uses the LD, operated under ordinary conditions, is classified as Class 3B according...

 Open the catalog to page 3
Pulsed Laser Diode L11854-307-05/-55-4

Pulsed Laser Diode L11854-307-05/-55 Handling Precautions • • • Negligence following the instructions may lead to the degradation of the LD GABSOLUTE MAXIMUM RATINGS When using this product, observe the maximum ratings stated in the specifications and test results. GProtection against Electrostatic Discharges The LD is an Electrostatic-Discharge Sensitive (ESDS) device that may be damaged or deteriorated by electrostatic discharges. When handling the LD, ensure the following measures are taken. (ESDS : Electrostatic discharge sensitive devices) · The conductive sheet which is electrically grounded...

 Open the catalog to page 4

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.