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PHOTOSENSOR MODULE H10770 SERIES

PHOTOSENSOR MODULE H10770 SERIES

PHOTOSENSOR MODULE H10770 SERIES

Product catalog summary
Specifications:
The document outlines the specifications for the H10770 series photosensor modules by Hamamatsu. Key parameters include input voltage, control voltage, and various performance metrics such as rise time, ripple noise, and operating temperature. The modules feature high quantum efficiency with GaAsP and GaAs photocathodes, suitable for photon counting applications.

Procedures:
The document provides guidance on adjusting the control voltage to modify sensitivity. It emphasizes the importance of monitoring the control voltage to ensure it does not exceed +0.9 V when using a potentiometer.

Features:
The H10770 series is compact, offers cable output, and is designed for high quantum efficiency. It is suitable for photon counting, particularly the H10770PA-40 and H10770PA-50 models.

Figures and Diagrams:
Several figures illustrate the spectral response, gain, and dimensional outline of the photosensor modules. These visuals aid in understanding the module's performance characteristics and physical dimensions.

Contact Information:
The document provides contact details for Hamamatsu offices worldwide, including locations in the USA, Germany, France, the UK, North Europe, Italy, China, and Taiwan.
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Catalog excerpts

PHOTOSENSOR MODULE H10770 SERIES-1

PHOTOSENSOR MODULE H10770 SERIES FEATURES ●High quantum efficiency: GaAsP / GaAs photocathode ●Cable output ●Compact ●For photon counting (H10770PA-40 / H10770PA-50) SPECIFICATIONS Parameter Input voltage Max. input voltage Max. input current 1 Max. output signal current Max. control voltage Recommended control voltage adjustment range 2 Effective area Photocathode material Spectral response Peak quantum efficiency wavelength Min. at peak quantum Quantum efficiency wavelength Typ. efficiency Min. at 800 nm Typ. Cathode Min. at peak quantum Radiant efficiency wavelength Typ. sensitivity Min. at 800 nm Typ. at peak quantum Min. Radiant efficiency wavelength Typ. sensitivity 1 Min. at 800 nm Typ. Typ. 34 Dark current Anode Max. Typ. Dark count 34 Max. Min. Gain 3 Typ. Rise time 3 Typ. Ripple noise 35 (peak to peak) Max. Settling time 6 Typ. Operating ambient temperature 7 Storage temperature 7 Weight NOTE: 1Input voltage = +15.0 V, Control voltage = +0.8 V in darkness, just after protection circuit works. 2Under protection circuit is active, Vcont outputs +15 V and high voltage turn off. (Output impedance 33 kΩ) Status of protection operation can be checked by monitoring Vcont voltage. 3Control voltage=+0.8 V 4After 30 minutes storage in darkness 5Cable RG-174/U, Cable length 450 mm, Load resistance=1 MΩ, Load capacitance=22 pF 6The time required for the output to reach a stable level following a change in the control voltage from +0.9 V to +0.5 V 7No condensation Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to

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PHOTOSENSOR MODULE H10770 SERIES-2

PHOTOSENSOR MODULE H10770 SERIES Figure 1: Spectral response GaAs PHOTOCATHODE (suffix: -50) 106 100 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) GaAsP PHOTOCATHODE (suffix: -40) 1 103 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 0.1 200 Figure 3: Sensitivity adjustment method VOLTAGE PROGRAMMING RESISTANCE PROGRAMMING SIGNAL OUTPUT LOW VOLTAGE INPUT (RED) GND (BLACK) Vref OUTPUT (BLUE) Vcont INPUT (WHITE) SIGNAL OUTPUT LOW VOLTAGE INPUT (RED) GND (BLACK) Vref OUTPUT (BLUE) Vcont INPUT (WHITE) • Adjust the control voltage to adjust the sensitivity. • Electrically insulate the reference...

 Open the catalog to page 2

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