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Photosensor with front-end IC S14137-01CR

Photosensor with front-end IC S14137-01CR
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Photosensor with front-end IC S14137-01CR - 1

Photosensor with front-end IC S14137-01CR Compact 16-element APD array suitable for various light level detection (parallel output) The S14137-01CR is a compact optical device that integrates a 16-element APD array and a preamp. The incident light pulse is converted into a voltage pulse, and then the converted pulse is output. It has a built-in DC feedback circuit for reducing the eﬀects of background light. The parallel output 16-element array enables simultaneous measurement of all pixels. Distance measurement (e.g., LiDAR) High-speed response: 180 MHz Reduced background light eﬀects Small waveform distortion when excessive light is incident Structure Parameter Detector Photosensitive area (per element) Element pitch Number of elements Number of output Package Specification Si APD array 0.15 × 0.43 0.5 16 16 Plastic Absolute maximum ratings Parameter Supply voltage (for preamp) Reverse voltage (for APD) Photocurrent (DC) Incident pulse light level Operating temperature Storage temperature Soldering temperature*2 Symbol Condition Vcc max V_APD IL max Ppulse Topr No dew condensation*1 Tstg No dew condensation*1 Tsol *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: Reflow soldering, JEDEC J-STD-020 MSL 3, see P.8 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.

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Photosensor with front-end IC S14137-01CR - 2

Photosensor with front-end IC Electrical and optical characteristics (Ta=25 °C, Vcc=3.3 V, AC coupling + 50 Ω, without DC light, per pixel) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Breakdown voltage Temperature coefficient of breakdown voltage Sensitivity uniformity Dark current Current consumption Low cutoff frequency High cutoff frequency Equivalent input power noise Output voltage level Output impedance Maximum output voltage amplitude Supply voltage Crosstalk*3 Condition M=100 λ=905 nm, M=50 ID=100 μA M=50 (average over all pixels) M=50 Total sum of...

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Photosensor with front-end IC S14137-01CR - 3

Photosensor with front-end IC Spectral response Dark current vs. reverse voltage Dark current Frequency characteristics Current consumption vs. ambient temperature (typical example) Gain [relative value] (dB)

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Photosensor with front-end IC S14137-01CR - 4

Photosensor with front-end IC Gain vs. reverse voltage 1000 Dummy Cathode

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Photosensor with front-end IC S14137-01CR - 5

Photosensor with front-end IC Output waveform examples 0.6

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Photosensor with front-end IC S14137-01CR - 6

Photosensor with front-end IC Dimensional outline (unit: mm) Photosensitive surface Function GND GND Vcc NC Dummy cathode NC NC NC Anode Anode Anode Anode Anode Anode Anode Anode NC NC NC Dummy cathode GND NC Note: Leave NC (1, 26, 28 to 30, 39 to 41) open; Do not connect to Vcc or GND. Index mark Tolerance unless otherwise noted ±0.25, ±2.5° Chip position accuracy with respect to package dimensions marked * X, Y≤±0.3, θ≤±2.5° Au plating KPICA0112EA Enlarged view of photosensitive area (unit: mm)

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Photosensor with front-end IC S14137-01CR - 7

Photosensor with front-end IC Recommended land pattern (unit: mm) P0.9 × 9=8.1 Application circuit example (50 Ω system, evaluation kit: C14779-03) CN18

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Photosensor with front-end IC S14137-01CR - 8

Photosensor with front-end IC Handling of the temperature characteristics of the APD gain The gain of the APD built into the photosensor with front-end IC varies depending on the temperature. The following two methods are available for handling this issue in using the sensor over a wide temperature range. Temperature compensation method that controls reverse voltage according to temperature changes Place temperature sensor such as a thermistor near the APD to measure the temperature of the APD. The reverse voltage after APD temperature correction is expressed by the following equation using...

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Photosensor with front-end IC S14137-01CR - 9

Photosensor with front-end IC Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products ∙ Surface mount type products Evaluation kit for photosensor with front-end IC C14779-03 An evaluation kit [95 × 72 (H × V) mm] is available for the photosensor with front-end IC S14137-01CR (with the S14137-01CR). Refer to the application circuit example (P.7) for the equivalent circuit. Contact us for detailed information. Information described in this material is current as of December 2021. Product specifications are subject to change...

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