Photosensor with front-end IC S13645-01CR Compact 16-element APD array suitable for various light level detection (serial output) The S13645-01CR is a compact optical device that integrates 16-element Si APD array and preamp. It has a built-in DC feedback circuit for reducing the effects of background light. It also provides excellent noise and frequency characteristics. In the S13645-01CR, output can be obtained from any one channel specified in the selection logic. Distance measurement Two-level gain switch function (low gain: single output, high gain: differential output) Reduced background light effects Small waveform distortion when excessive light is incident Structure Parameter Detector Photosensitive area (per element) Element pitch Number of elements Package Specification Si APD array 1.0 × 0.4 0.5 16 Plastic Absolute maximum ratings Parameter Supply voltage (for preamp) Reverse voltage (for APD) Reverse current (DC) DCFB terminal voltage Gain terminal voltage Channel selection terminal voltage Operating temperature Storage temperature Soldering temperature*2 Symbol Condition Vcc max V_APD IR max Topr No dew condensation*1 Tstg No dew condensation*1 Tsol *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: Reflow soldering, IPC/JEDEC J-STD-020 MSL 3, see P.8 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.

Photosensor with front-end IC Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Breakdown voltage Temperature coefficient of breakdown voltage Dark current Temperature coefficient of dark current Terminal capacitance Excess noise figure Gain Current consumption Low cutoff frequency High cutoff frequency Input conversion noise power Output voltage level Output offset voltage Maximum output voltage amplitude Supply voltage Crosstalk ΔTVBR M=50 M=50 M=50, f=1 MHz M=50, λ=905 nm λ=905 nm Low gain Icc High gain Low gain fcl High gain Low...

Photosensor with front-end IC Spectral response Dark current vs. reverse voltage (Typ. Ta=25 °C, M=50 at 905 nm) Dark current Relative sensitivity (%) Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) Terminal capacitance APD gain vs. reverse voltage

Photosensor with front-end IC Frequency characteristics (typical example) Current consumption vs. temperature (typical example) High gain Low gain Low -5 Gain [relative value] (dB) Gain vs. temperature (typical example) Gain vs. reverse voltage (Typ. λ=905 nm) 1000 High gain Low gain Gain (relative value)

Photosensor with front-end IC Gain Low gain (× 1) High gain (× 20) DC feedback circuit Setting 0 1 Background light elimination function ON OFF Note: 0=Vcc × 0.2 V or less, 1=Vcc × 0.8 V or over The pull-down resistor of the digital input terminal is 10 kΩ. TIA DCFB APD: ch16 Select logic

Photosensor with front-end IC Output waveform examples (Ta=25 °C, M=50, linear region, pulse width=5 ns) Low gain High gain (Incident light level: 10 μW) (Incident light level: 70 nW)

Photosensor with front-end IC Dimensional outline (unit: mm) Photosnsitive surface Pin no. GND DCFB_dis NC Anode Anode Anode Anode Anode Anode Anode Anode Anode Anode Anode Leave terminals 1, 2, and 17 open. Do not connect them to Vcc1, Vcc2, or GND. Tolerance unless otherwise noted: ±0.2 Chip position accuracy with respect to the package dimensions marked*: X, Y≤±0.2, T≤±2° Recommended land pattern (unit: mm) 0.635 Enlarged view of photosensitive area (unit: mm)

Photosensor with front-end IC Connection example (50 Ω system) Vcc When using the photosensor with front-end IC in a 50 Ω system, connect resistors with the same resistance (200 Ω in the above figure) to output loads Out1 and Out2. If resistors with the same resistance are not connected to the output loads, the waveform may be distorted or the output may oscillate. Handling of temperature characteristics of APD gain The gain of the APD built into the photosensor with front-end IC varies depending on the temperature. The following two methods are available for handling this issue in using the...

Photosensor with front-end IC Recommended soldering conditions 300 260 °C max. ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal,...

Photosensor with front-end IC Evaluation kit for photosensor with front-end IC C13666-03 Evaluation kit [95 × 72 (H × V) mm] for photosensor with front-end IC is available (with the S13645-01CR). Contact us for detailed information. Equivalent circuit CN15: V_APD Information described in this material is current as of December 2020. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text...