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L11854-336-05

L11854-336-05

Product catalog summary

Overview: This document provides technical specifications and features of the Pulsed Laser Diode L11854-336-05 by Hamamatsu Photonics. It includes details on absolute maximum ratings, characteristics, and applications.

Specifications:

Absolute Maximum Ratings: The diode operates at a pulsed forward current (Ifp) of 40 A, reverse voltage (Vr) of 2.5 V, pulse duration (tw) of 100 ns, duty ratio (DR) of 0.1%, operating temperature (Top(c)) range of -40 to +85 °C, and storage temperature (Tstg) range of -40 to +100 °C.
Characteristics: At an operating temperature of 25 °C, the diode has a peak pulsed radiant power (Φep) of 100 W, peak emission wavelength (λp) of 905 nm, forward voltage (Vop) of 12 V, spectral radiation half bandwidth (Δλ) of 6 nm, rise time (tr) of 2 ns, beam spread angles (θ// and θ⊥) of 8 and 24 degrees respectively, lasing threshold current (Ith) of 0.8 A, and an emitting area size of 360 μm × 10 μm.

Features: The diode is designed for use in laser range finders, security systems, and measuring instruments. It is a 3-stack pulsed laser diode with a peak output power of at least 100 W and a peak emission wavelength of 905 nm.

Figures and Graphs:

Figure 1: Shows the relationship between radiant flux and forward current.
Figure 2: Displays the emission spectrum.
Figure 3: Illustrates the directivity of the diode.
Figure 4: Provides an emitting image of the near field pattern.
Figure 5: Details the dimensional outline of the diode.

Contact Information: The document lists contact details for Hamamatsu Photonics offices worldwide, including locations in the USA, Germany, France, the UK, North Europe, Italy, China, and Taiwan.

Catalog excerpts

Pulsed Laser Diode ■ Features ● 3 stack PLD ● Peak output power: >100 W = ● Peak emission wavelength: 905 nm ● Emitting area size: 360 μm × 10 μm ■ Applications ● Laser range finder ● Security ● Measuring instruments ■ Absolute maximum ratings (Top(c) = 25 °C) Symbol Pulsed forward current Reverse voltage Pulse duration Duty radio Operating temperature Storage temperature ■ Characteristics (Top(c) = 25 °C) Parameter Pulsed radiant power (Peak power) Peak emission wavelength Forward voltage Spectral radiation half bandwidth Rise time Beam spread angle Lasing threshold current Emitting area size Note: General operating condition: pulse width tw = 50 ns, repetition frequency fr = 1 kHz Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the

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Pulsed Laser Diode L11854-336-05 Figure 1: Radiant flux vs. Forward current (Typ.) Figure 2: Emission spectrum (Typ.) Relative radiant flux (%) Peak radiant flux Φep (W) Pulsed forward current Ifp (A) Figure 4: Emitting image of near filed pattern (NFP) (Ifp = 35 A, Top(C) = 25 °C) Relative radiant flux (%) Angle (degree) Figure 5: Dimensional outline (unit: mm) +0.01 Directions of far field pattaerns (FFP), parallel and vertical direction against at can package. (Front of view) GLASS WINDOW N.C. LD CATHODE LD ANODE (CASE) HAMAMATSU PHOTONICS K.K., Laser Promotion Division, Business Promotion...

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