L11854-336-05
1 /2Pages
L11854-336-05
1 /2Pages
Catalog excerpts
Pulsed Laser Diode ■ Features ● 3 stack PLD ● Peak output power: >100 W = ● Peak emission wavelength: 905 nm ● Emitting area size: 360 μm × 10 μm ■ Applications ● Laser range finder ● Security ● Measuring instruments ■ Absolute maximum ratings (Top(c) = 25 °C) Symbol Pulsed forward current Reverse voltage Pulse duration Duty radio Operating temperature Storage temperature ■ Characteristics (Top(c) = 25 °C) Parameter Pulsed radiant power (Peak power) Peak emission wavelength Forward voltage Spectral radiation half bandwidth Rise time Beam spread angle Lasing threshold current Emitting area size Note: General operating condition: pulse width tw = 50 ns, repetition frequency fr = 1 kHz Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the
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Pulsed Laser Diode L11854-336-05 Figure 1: Radiant flux vs. Forward current (Typ.) Figure 2: Emission spectrum (Typ.) Relative radiant flux (%) Peak radiant flux Φep (W) Pulsed forward current Ifp (A) Figure 4: Emitting image of near filed pattern (NFP) (Ifp = 35 A, Top(C) = 25 °C) Relative radiant flux (%) Angle (degree) Figure 5: Dimensional outline (unit: mm) +0.01 Directions of far field pattaerns (FFP), parallel and vertical direction against at can package. (Front of view) GLASS WINDOW N.C. LD CATHODE LD ANODE (CASE) HAMAMATSU PHOTONICS K.K., Laser Promotion Division, Business Promotion...
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