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InGaAs APD G8931 series
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InGaAs APD G8931 series

InGaAs APD G8931 series
1 /4Pages

Catalog excerpts

InGaAs APD G8931 series-1

High-speed response The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection. The G8931-04 provides high-speed response at 2.5 Gbps, which is necessary for SONET, G/GE-PON, and other optical trunk lines. The G8931-20 features a large ϕ0.2 mm photosensitive area. High-speed response: 2.5 Gbps (G8931-04) Distance measurement Optical communications Low-light-level detection High sensitivity Structure Parameter Photosensitive area Package Window material G8931-10 ϕ0.1 TO-18 Borosilicate glass (AR coated: 1.55 µm) Absolute maximum ratings (Ta=25 °C) Parameter Symbol G8931-04 G8931-10 G8931-20 Unit Forward current IF 10 mA Reverse current IR 2 mA Operating temperature*1 Topr -40 to +85 °C Storage temperature*1 Tstg -55 to +125 °C *1: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: lways be sure to use the product within the absolute maximum ratings. Exceeding the absolute maximum ratings even momentarily A may cause a drop in product quality. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Temperature coefficient of dark current Cutoff frequency Terminal capacitance Breakdown voltage Temperature coefficient of breakdown voltage Excess noise figure Gain

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InGaAs APD G8931 series-2

Spectral response Spectral transmittance of window material (Typ. Ta=25 °C, M=10) 2 hotosensitivity temperature characteristics Temperature coefficient of photosensitivity (%/ °C) Photosensitivity temperature characteristics (Typ.)

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InGaAs APD G8931 series-3

Dark current vs. reverse voltage Dark current vs. reverse voltage Dark current, photocurrent, gain vs. reverse voltage G8931-04 (Typ. Ta=25 °C, λ=1.55 µm) Dark current vs. reverse voltage 10 pA 1 pA Dark current Terminal capacitance vs. reverse voltage 10 pA 10 50 Terminal capacitance vs. reverse voltage Dark current, photocurrent Dark current, photocurrent Dark current, photocurrent

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InGaAs APD G8931 series-4

Dimensional outline (G8931-03, G9908, G8931-04, G8931-20, unit: mm) Dimensional outline (unit: mm) APD peripheral circuit example Bias power supply (temperature compensation) Power supply limiting resistor 0.1 µF or more (as close to APD as possible) Photosensitive surface 0.45 Lead Overvoltage protection circuit Related information Precautions Disclaimer Safety precautions Metal, ceramic, plastic packages Compound semiconductor photosensors Technical information ∙ Infrared detectors The content of this document is current as of July 2019. Product specifications are subject to change without...

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