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InGaAs APD G14858-0020AA

InGaAs APD G14858-0020AA
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InGaAs APD that greatly reduces dark current This InGaAs APD (avalanche photodiode) greatly reduces dark current over existing products by the use of a new device structure and improved processing. The G14858-0020AA is used for distance measurement, low-light-level detection, and so on. Distance measurement Low-light-level detection High sensitivity Structure Parameter Window material Package Photosensitive area Specification Borosilicate glass (AR coated: 1.55 µm) TO-18 ɸ0.2 Absolute maximum ratings Parameter Reverse current Forward current Operating temperature*1 Storage temperature*1 Symbol IR max IF max Topr Tstg *1: No dew condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ 0.95 to 1.7 µm Peak sensitivity wavelength λp 1.55 µm Photosensitivity S λ=1.55 µm, M=1 0.65 0.8 A/W Dark current ID VR=VBR × 0.95 20 50 nA Temperature coefficient of dark current ∆TID VR=VBR × 0.95 1.07 times/°C Terminal capacitance Ct VR=VBR × 0.95, f=1 MHz 2.0 pF Cutoff frequency fc M=10, RL=50 Ω 0.9 GHz Breakdown voltage VBR ID=100 µA 50 65 80 V Temperature coefficient of breakdown voltage Γ -40 to +85 °C 0.1 V/°C Gain M λ=1.55 µm, -30 dBm 30 Note: ttachment data: breakdown voltage (ID=100 µA), dark current (VR=VBR × 0.95), terminal capacitance (VR=VBR × 0.95, A f=1 MHz), dark current vs. reverse voltage (graph), gain vs. reverse voltage (gra

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Spectral response Spectral transmittance of window material (Typ. Ta=25 °C, M=1) 0.2 hotosensitivity temperature characteristics 84 Terminal capacitance vs. reverse voltage Terminal capacitance vs. reverse voltage Temperature coefficient of photosensitivity (%/ °C) Photosensitivity temperature characteristics

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Dark current, photocurrent, gain vs. reverse voltage (Typ. Ta=25 °C, λ=1.55 µm, -30 dBm) Dark current 30 APD peripheral circuit example 20 Dark current, photocurrent Dimensional outlines (unit: mm) Dimensional outline (unit: mm) Bias power supply (temperature compensation) Power supply limiting resistor APD peripheral circuit example 0.1 µF or more (as close to APD as possible) Overvoltage protection circuit Photosensitive surface

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Related information www.hamamatsu.com/sp/ssd/doc_ja.html Precautions ∙ Disclaimer ∙ Safety consideration ∙ Metal, ceramic, plastic package products Information described in this material is current as of January 2019. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest...

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