InAsSb photovoltaic detectors P13894 series High-speed response and high sensitivity in the spectral band up to 11 μm, infrared detectors The P13894 series are photovoltaic type detectors that have achieved high sensitivity in the spectral range up to 11 μm using Hamamatsu unique crystal growth technology and process technology. These products are environmentally friendly infrared detectors and do not use mercury or cadmium, which are substances restricted by the RoHS Directive. They are replacements for previous products that contain these substances. A compact surface mount type has been added to the easily handled non-cooling type. High sensitivity High-speed response Radiation thermometers High shunt resistance Non-cooled (P13894-011CN/-011NA/-011MA) Options (sold separately) Compact, surface mount ceramic package (P13894-011CN) Heatsink for two-stage TE-cooled type Temperature controller for TE-cooled type Amplifier for infrared detector Compatible with lead-free reflow soldering (P13894-011CN) Structure Parameter Window material Package Cooling Photosensitive area Field of view (FOV) P13894-211MA Ge with AR coating TO-8 Two-stage TE-cooled 113 Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Soldering conditions NEW P13894-011CN P13894-011NA P13894-011MA P13894-211MA Symbol Condition VR 1 Topr No dew condensation*1 -40 to +85 -40 to +60 Tstg No dew condensation*1 -40 to +85 -40 to +60 *2 260 °C or less, within 10 s *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: Peak temperature: 240 °C max. See P7. JEDEC J-STD-020 MSL 2 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.

InAsSb photovoltaic detectors Electrical and optical characteristics (Ta=25 °C) Parameter Chip temperature Peak sensitivity wavelength Cutoff wavelength Photosensitivity Shunt resistance Detectivity Noise equivalent power Terminal capacitance Rise time *3: Uniform irradiation on the entire photosensitive area Note: Uniform irradiation must be applied to the entire photosensitive area during use. Sensitivity temperature characteristics (P13894-011MA/-211MA)

InAsSb photovoltaic detectors Spectral transmittance of window material Incident light level (W) Shunt resistance vs. chip temperature (Typ.)

InAsSb photovoltaic detectors Specifications of two-stage TE-cooler (Ta=25 °C) Parameter Allowable current Allowable voltage Thermistor resistance Thermistor power dissipation Current vs. voltage characteristics of TE-cooler 1.2 Cooling characteristics of TE-cooler Thermistor temperature characteristics (Typ.)

InAsSb photovoltaic detectors Measurement circuit example Chopper 1200 Hz Detector FFT analyzer or the like Amplifier fo=1200 Hz ∆f=1 Hz Incident energy=245 μW/cm2 Dimensional outline (unit: mm) P13894-011CN Photosensitive surface Photosensitive surface Recommended land pattern KIRDA026

InAsSb photovoltaic detectors ϕ9.1 ± 0.3 ϕ8.1 ± 0.1 Light input window ϕ5.5 ± 0.1 Light input window ϕ10.0 ± 0.2 Photosensitive surface Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor KIRD

InAsSb photovoltaic detectors Recommended reflow soldering conditions 300 °C 240 °C max. ∙ After unpacking, store the device in an environment at a temperature range of 5 to 30 °C and a humidity of 60% or less, and perform reflow soldering within 1 year. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. ∙ When you set reflow soldering conditions, check that problems do not occur in the product by testing out the conditions in advance. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer Information...