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Emission Microscope PHEMOS Series

Emission Microscope PHEMOS Series

Emission Microscope PHEMOS Series

Product catalog summary
Overview: The PHEMOS series of emission microscopes are advanced tools for semiconductor failure analysis, detecting faint emissions to locate device anomalies. They are applicable to a wide range of devices, including memory, logic, power, and flat panel devices.
Key Features:
  • High-sensitivity NIR detector for longer wavelength emissions.
  • Integrated IR confocal laser scan microscope for high-resolution imaging.
  • Optional IR-OBIRCH analysis for localizing metal defects and current leakage paths.
  • Superimposed display and contrast enhancement functions for clearer images.
Models:
  • PHEMOS-1000: A standard model with high-resolution capabilities, flexible for various device environments, and supports numerous options including NIR camera and NanoLens.
  • PHEMOS-200: A cost-effective model with basic performance, equipped with a high-resolution cooled CCD camera, and optional backside emission observation.
Applications: Suitable for failure analysis in design stages, defective product analysis, ESD damage localization, standby current failure, and more. Supports analysis of LOC packages, flat panel displays, and metal wiring defects using the IR-OBIRCH method.
Technological Advancements:
  • Use of NanoLens for improved spatial resolution and convergence efficiency.
  • Digital lock-in kit for enhanced IR-OBIRCH detectability.
  • Dynamic analysis by laser stimulation (DALS) for analyzing device operation conditions.
Camera Options:
  • C-CCD Camera: Basic emission detector with high resolution and low noise.
  • SI-CCD Camera: High sensitivity and position accuracy for low-light emissions.
  • InGaAs Camera: Suitable for low-voltage drive IC chips and backside faint emission analysis.
Conclusion: The PHEMOS series offers a comprehensive suite of tools and options to enhance semiconductor failure analysis, improving product reliability and efficiency in detecting and analyzing defects.
Integration with LSI Tester: The document discusses using an LSI tester with the PHEMOS system for LSI chip failure analysis, highlighting CAD navigation software and network connections for enhanced defect identification.
Specifications: The PHEMOS system connects to an LSI tester via a short cable and probe card adapter, supports TCP/IP network connections, and uses CAD navigation software for defect identification.
Procedures: Outlines failure analysis using the PHEMOS system, including IR-OBIRCH observation and semi-automatic probing, with automatic extraction of suspicious signal lines and NETs.
Standards and Safety: Compliance with IEC 60825-1 for laser safety, including classification of laser diodes and safety measures.
Recommendations: Follow IEC safety measures and use the integrated CAD navigation system for efficient failure localization.
Technical Data: Provides dimensions, weight, power consumption, and utility requirements. Compatible with international standards and supported by Hamamatsu Photonics globally.
Contact Information: Contact details for Hamamatsu Photonics offices in Japan, the USA, Germany, France, the UK, North Europe, Italy, and China for inquiries and support.
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Catalog excerpts

Emission Microscope PHEMOS Series-1

Emission Microscope PHEMOS series

 Open the catalog to page 1
Emission Microscope PHEMOS Series-2

Reveals "Invisible" Defects and Failures Detects very faint emissions caused by anomalies quickly and accurately to determine failure locations. The PHEMOS series of emission microscope is a group of semiconductor failure analysis tools that detect faint emissions caused by semiconductor device anomalies to specify the failure location. They can be used on anything from memory and logic devices to power and flat panel devices. They have a wide range of applications, from failure analysis in the design stage to defective product analysis in the field. Standby current Metal wiring defect IR-OBIRCH...

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Emission Microscope PHEMOS Series-3

Emission Microscope PHEMDS Series Recently, the use of multi-layered metal wiring and new package technology has made backside detection indispensable in emission analysis. Moreover, the increasing complexity of semiconductor device design caused by geometric shrinkage and low-voltage biasing leads to emission wavelength shift to the NIR region. It makes failure analysis work more difficult and time consuming. In the PHEMOS series, Hamamatsu offers a high- sensitivity NIR detector for longer wavelength emission. An IR confocal laser scan microscope is integrated as standard, which provides a...

 Open the catalog to page 3
Emission Microscope PHEMOS Series-4

Emission Microscope PHEMOS Series Product Lineup Standard feature C-CCDl LSM Back! OB I NanoL I NIR I LMarker I SI-CCD The industry standard model The PHEMOS-1000 is a standard model high-resolution emission microscope that includes an IR confocal laser scan microscope. From a socket board to a 300 mm double-sided wafer prober, the PHEMOS-1000 flexibly corresponds to device environment and set-up. It can also accommodate the highly sensitive NIR camera and the high-resolution NanoLens as options. There are various options including IR-OBIRCH analysis, connection to an LSI tester and the CAD navigation...

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Emission Microscope PHEMOS Series-5

Emission Microscope PHEMOS Series Detectors/ Overview of functions IR confocal laser scan microscope The cooled CCD camera is a basic emission detector available for the PHEMOS series. High resolution and low readout noise provide high contrast and clear images. Although its main strength is for frontside detection, its sensitivity extends into the 1100 nm near- infrared range, making it useful for backside observations as well The SI-CCD camera detects low-light emissions from minute patterns in LSI devices with both high sensitivity and high position accuracy, which slashes detection time by...

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Emission Microscope PHEMOS Series-6

Emission Microscope PHEMOS Series IR-OBIRCH (Infrared Optical Beam Induced Resistance CHange) analysis detects current alteration caused by leakage current paths and contact area resistance failure in devices by irradiating an infrared laser. PRINCIPLE OF OBIRCH ANALYSIS Laser (frontside) Current change due to laser irradiation (when constant voltage is applied) -n . Voltage change due to laser irradiation (when constant current is applied) Resistance increase with the temperature increase due to laser irradiation Temperature increase due to laser irradiation Temperature coefficient of resistance...

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Emission Microscope PHEMOS Series-7

Emission Microscope PHEMDS Series External connection Connection with the FA-Navigation failure analysis support syste Combining detection signals from PHEMOS and design data, and automatically extracting suspicious signal lines contributes to making the work of narrowing down the malfunction locations more effective and to reducing the time needed to clarify the route cause Analysis is easily possible using GDS II or LEF/DEF at both Failure information physical analysis information Wiring information logic information Failure localization supported by FA-Navigation -_Pattern images / Design...

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Emission Microscope PHEMOS Series-8

LASER SAFETY Hamamatsu Photonics classifies laser diodes, and provides appropriate safety measures and labels according to the classification as required for manufacturers according to IEC 60825-1. When using this product, follow all safety measures according to the IEC. * PHEMOS are registered trademark of Hamamatsu Photonics K.K. (France, Germany, Japan, U.K., U.S.A.) * Product and software package names noted in this documentation are trademarks or registered trademarks of their respective manufacturers. • Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility...

 Open the catalog to page 8

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.