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Electron beam detector Si photodiodes S11141-10/S11142-10

Electron beam detector Si photodiodes S11141-10/S11142-10
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Electron beam detector Si photodiodes S11141-10/S11142-10 - 1

Electron beam detector Si photodiodes S11141-10 High sensitivity, direct detection of low energy (1 keV or more) electron beams Direct detection of low energy (1 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron microscope (SEM) High gain: 300 times, high detection efﬁciency: 72 % (incident electron energy: 1.5 keV) Large active area size S11141-10: 10 × 10 mm S11142-10: 14 × 14 mm (6.925 × 6.925 mm/1 ch) ϕ2.0 mm hole in center of active area Design is suitable for use with backscattered electron detector of SEM. S11142-10: 4-element photodiode Detects reﬂection electron beam position (angle) Thin ceramic package Allows short-distance arrangement between the electron gun and a sample in a SEM Uses a wiring board made of less magnetic materials that are unlikely to affect electron beam trajectories. Structure Parameter Photosensitive area Number of elements Package Window material Value 20 -20 to +60 -20 to +80 260 °C or less, within 5 s Ceramic None Absolute maximum ratings Parameter Reverse voltage Operating temperature*1 Storage temperature*1 Soldering condition Symbol VR max. Topr Tstg Tsol *1: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.

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Electron beam detector Si photodiodes S11141-10/S11142-10 - 2

Electrical and optical characteristics (Ta=25 °C) Parameter Incident electron energy range Output current Dark current Terminal capacitance Cut-off frequency Electron multiplying gain Electron energy 1.5 keV Ip=100 pA*3 VR=10 mV VR=5 V VR=0 V, f=10 kHz VR=5 V, f=10 kHz VR=0 V, RL=50 Ω λ=400 nm, -3 dB VR=5 V, RL=50 Ω λ=400 nm, -3 dB Electron energy 1.5 keV Ip=100 pA*3 *2: Per 1 element *3: Injection current (probe current) Gain vs. electron energy Detection efficiency vs. electron energy Detection efficiency (%) Gain = Isc/Ip Detection efficiency = (Gain/GTH) × 100 GTH = Electorn energy/3.62...

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Electron beam detector Si photodiodes S11141-10/S11142-10 - 3

Electron multiplication principle Output current Dead layer Generation of electron-hole pairs (electron multiplication) Electrons generate ions as they pass through silicon. This ionization process generates a large number of electron-hole pairs that then multiply the number of electrons. The electron multiplication can boost the output current by approximately 300 times at an input electron energy of 1.5 keV (refer to "Gain vs. electron energy"). KSPDC0089EA Dark current vs. reverse voltage (typical example) Terminal capacitance vs. reverse voltage (Ta=25 °C) Terminal capacitance Dark...

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Electron beam detector Si photodiodes S11141-10/S11142-10 - 4

Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.2) S11141-10 25.0 10.0 Wire protection resin Photosensitive area

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Electron beam detector Si photodiodes S11141-10/S11142-10 - 5

Anode common Wire protection resin Photosensitive area

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Electron beam detector Si photodiodes S11141-10/S11142-10 - 6

Recommend soldering conditions · Soldering temperature: below 260 °C · Soldering time: within 5 seconds Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Unsealed products Technical information ∙ Si photodiode / Application circuit examples Information described in this material is current as of November, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies...

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