456 SAPPHIRE Enhanced Performance in Fluorine-based Plasmas sapphire / product data MULTIPLE FABRICATION METHODS Sapphire is an excellent material for semiconductor equipment components subject to uorine radical exposure. Greene, Tweed offers equipment components fabricated from three forms of sapphire, addressing applications from etchant gas delivery tubes to optical windows. Utilizing sapphire made through the Stephanov-EFG process, a variety of designs can be made including tubes, rods, sheets and bers in near-net nished shape. The Kiropolous technique yields very high-quality material for optical windows with selectable crystallographic orientation. In addition, newly developed technology allows fully homogeneous assembly of sapphire slabs, providing large part fabrication with the best possible crystallographic orientation. These fabrication techniques, combined with excellent machining and surface preparation technology, give Greene, Tweed the ability to supply optimal component designs and shapes. Engineering • Transfer of remote-generated F- radicals to process chambers design assistance along with material characterization ensures the • Lift pins for wafer handling inside process chambers most advantageous implementation of high-performance sapphire components. • Optical transmission light-pipe for plasma spectroscopy • Temperature sensor light-pipe interface FEATURES & BENEFITS • Resistance to uorine radicals from process gases extends service life of parts • High compressive strength for lift pins minimizes breakage and vibration • Fluorine gas mixers • Microwave-transparent remote generator gas tube • Optical viewing windows for in-situ process monitoring, via laser or other optical imaging • High-temperature capability ensures operations to exceed 1000°C (1832°F) for semiconductor processing applications such as RTP • Excellent optical transmissivity for IR to UV wavelengths allows for use in expanded applications © 2008, Greene, Tweed all rights reserved All trademarks are property of their respective owners. 11/08-GT DS-US-SC-087 • High hardness provides lower particulate generation and a cleaner process environment

Thermal Expansion vs. Temperature TYPICAL PROPERTIES Modulus of rigidity (shear) @ 25°C (77°F), Msi (GPa) Poisson’s Ratio Hardness, Knoop Electrical Volume Resistivity @ 25°C (77°F), Ohm-cm Dielectric Strength, kV/cm Magnetic Susceptibility, x10-6 Thermal Wavelength, microns Transmission vs. Wavelength at 1 mm thickness 100 Maximum Operating Temperature Specic Heat @ 25°C (77°F), C/gºK Melting Point Thermal Conductivity @ 25°C (77°F), W/mºK © 2008, Greene, Tweed all rights reserved All trademarks are property of their respective owners. 11/08-GT DS-US-SC-087 sapphire / product data ASTM Method...