UV-A Sensor GUVV-S10SD

Product catalog summary

Overview

This document details the specifications and characteristics of the GUVV-S10SD, an Indium Gallium Nitride (InGaN) based Schottky-type photodiode designed for UV-A lamp monitoring applications. The device operates in photovoltaic mode, offering high responsivity and low dark current.

Key Features

Material: Indium Gallium Nitride (InGaN)
Device Type: Schottky-type photodiode
Operation Mode: Photovoltaic (zero bias)
High responsivity to UV-A spectrum
Low dark current for improved signal-to-noise ratio
Application: UV-A lamp monitoring

Absolute Maximum Ratings

Parameter	Symbol	Min	Max	Unit	Remarks
Storage Temperature	Tst	-40	90	℃
Operating Temperature	Top	-30	85	℃
Reverse Voltage	Vr,max		2	V
Forward Current (within 10 sec.)	If,max		10	mA
Soldering Temperature	Tsol		260	℃	Max. soldering temperature

Electrical and Optical Characteristics (at 25℃)

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions / Remarks
Dark Current	Id		1		nA	Vr = 0.1 V
Photocurrent	Iph	162	181	200	nA	λ = 360 nm, Vr = 0 V, UVA Lamp 1 mW/cm²
Temperature Coefficient	Itc			0.1	%/℃
Responsivity	R		0.18		A/W	λ = 360 nm
Spectral Detection Range	λ	240		395	nm
Active Area			0.076		mm²

Responsivity and Photocurrent Behavior

The photodiode exhibits a linear relationship between photocurrent and UV-A power intensity. Under test conditions (Vr = 0 V, optical source at 352 nm UVA lamp), the photocurrent (in nA) can be approximated by the formula:

Photocurrent (nA) = 181 × UV Power (mW/cm²)

This indicates high sensitivity and predictable response within the UV-A range.

Caution and Handling Recommendations

Electrostatic Discharge (ESD) can damage the device; proper ESD precautions must be observed during handling.
Optical source power should be within 0.1 µW/cm² to 100 mW/cm² for standard operation. For power levels exceeding 100 mW/cm², contact the manufacturer.
Soldering temperature must not exceed 260℃ to avoid device damage.

Outline and Dimensions

The document includes outline diagrams and physical dimensions of the photodiode, ensuring proper integration into sensor assemblies. (Details not included here but should be referenced for mechanical design.)

Summary

The GUVV-S10SD photodiode is a high-performance UV-A sensor based on InGaN technology, optimized for low noise and high responsivity in photovoltaic mode. It is suitable for UV-A lamp monitoring with well-defined electrical and optical parameters, robust maximum ratings, and clear handling guidelines.

Catalog excerpts

Indium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation High Responsivity & Low Dark Current Outline Diagrams and Dimensions Cathode Absolute Maximum Ratings Storage Temperature Operating Temperature Forward Current Optical Source Power Range Soldering Temperature Test Conditions ※Notice: apply to us in the case that Optical Source Power is over 100㎽/㎠. Characteristics (at 25℃) Parameter Dark Current Photo Current Temperature Coefficient Spectral Detection Range Active area Responsivity Curve Photocurrent along UV Power Photo current(nA) GUVV-S10SD Test Condition : Vr=0V Optical Source : 352nm UVA Lamp Photocurrent(nA)=181 × UV Power Caution ESD can damage the device hence please avoid ESD.

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