Indium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation High Responsivity & Low Dark Current Outline Diagrams and Dimensions Cathode Absolute Maximum Ratings Storage Temperature Operating Temperature Forward Current Optical Source Power Range Soldering Temperature Test Conditions ※Notice: apply to us in the case that Optical Source Power is over 100㎽/㎠. Characteristics (at 25℃) Parameter Dark Current Photo Current Temperature Coefficient Spectral Detection Range Active area Responsivity Curve Photocurrent along UV Power Photo current(nA) GUVV-S10SD Test Condition : Vr=0V Optical Source : 352nm UVA Lamp Photocurrent(nA)=181 × UV Power Caution ESD can damage the device hence please avoid ESD.