GUVCL-S10SD

Product catalog summary

Features
- Aluminium Gallium Nitride Based Material
- Schottky-type Photodiode
- Photovoltaic Mode Operation
- Very Low Cost UV-C LED Sensor

Applications
- UV-C LED Monitoring (265, 270, 280nm)
- Pure UV-C Monitoring
- Sterilization Lamp Monitoring

Absolute Maximum Ratings
- Reverse Voltage (Vr, max.): 5 V
- Storage Temperature (Tst): -40 to 90 ℃
- Operating Temperature (Top): -30 to 85 ℃

UVC Sensor for LED (GUVCL-S10SD)
Outline Diagrams and Dimensions
- Cathode and Anode specifications
- Maximum Forward Current (If,max.): Not specified
- Optical Power (Popt): Not specified
- Soldering Temperature (Tsol): 260 ℃ within 10 sec.

Characteristics (at 25℃)
- Dark Current (Id): 1 ㎁
- Photo Current (Iph): 111 to 135 ㎁
- Temperature Coefficient (Itc): ％/℃
- Responsivity (R): A/W
- Wavelength Range (λ): 230 to 320 ㎚
- Active Area: 0.076 ㎟
- Responsivity at λ = 280 ㎚, Vr = 0 V: 0.1 A/W
- Spectral Detection Range: 10% of R

Performance Graphs
- Photocurrent vs. UV Power: Photocurrent (nA) = 123 × UV Power
- Responsivity Curve: Shows the relationship between wavelength and optical power

Caution
- ESD can damage the device; avoid ESD.

Catalog excerpts

Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Very Low Cost UV-C LED Sensor Outline Diagrams and Dimensions Pure UV-C Monitoring Sterilization Lamp Monitoring Absolute Maximum Ratings Storage Temperature Operating Temperature Forward Current Optical Source Power Range Soldering Temperature Test Conditions Dark Current Photo Current Temperature Coefficient Spectral Detection Range Active area Responsivity Curve Photocurrent along UV Power 0.20 Photo current(nA) Optical Power(mW) GUVCL-S10SD Test Condition : Vr=0V Optical Source : 280nm UVC LED Photocurrent(nA)=123 × UV Power Caution ESD can damage the device hence please avoid ESD.

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GUVCL-S10SD

GUVCL-S10SD

Catalog excerpts

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