Photon Detection Solutions For Smart, Safe and Sustainable Applications - 3.3 Together we create a Smart World.
Open the catalog to page 1Photon Detection Solutions for your cutting-edge applications At Excelitas we’re sensing what you need for a healthier, safer, and more innovative tomorrow. Excelitas is recognized globally for the design and production of high-performance photonic detectors and pulsed laser diodes which contribute to a safer, greener and more comfortable world, every day. Our detection portfolio ranges from PN-, PIN- and APD Photodiodes, utilizing Silicon and InGaAs materials for sensitivity from 400 nm to 1700 nm, Single Photon Counting Modules and Balanced Receivers to detect the smallest amount of light possible,...
Open the catalog to page 2Avalanche Photodiodes Optical Receivers Low Light Level (L3D) Detectors & Modules Pulsed Laser Diodes Application Specific Components & Modules Silicon Photodiode Arrays Infrared Emitting Diodes
Open the catalog to page 3Avalanche Photodiodes AVALANCHE PHOTODIODES Avalanche Photodiodes Silicon APDs Silicon APDs Applications • Laser range finder Product Description These rear entry “reach-through” silicon APDs offer the best compromise in terms of cost and performance for applications requiring high speed and low noise photon detection from 400 nm up to 1100 nm. They feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 3 mm to accommodate a large variety of applications. The “S” series of the C30902 family of APDs can...
Open the catalog to page 4AVALANCHE PHOTODIODES Avalanche Photodiodes Silicon APDs Product Table Avalanche Photodiodes – Silicon APDs – TE-Cooled Active Diameter Typical Capacitance Typical Rise/Fall Time Typical Dark Current Typical Gain Typical Noise Current pA/√Hz TC stands for single stage cooler, operating temperature 0° C DTC stands for double stage cooler, operating temperature -20° C Typical Spectral Responsivity @ 22º C Package Drawing – TO-8 Flange Typical TO-18 Package with filter* *Note: Package dimensions for indication only. Exact package dimensions can be found on products datasheets.
Open the catalog to page 5Avalanche Photodiodes AVALANCHE PHOTODIODES Avalanche Photodiodes 1060 nm NIR Enhanced Si APDs 1064 nm NIR Enhanced Si APDs Product Description The C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused “reach-through” structure. The APD design is optimized for 1064nm operation. These APDs have quantum efficiency of up to 40% at 1064 nm. At the same time, the diodesretain the low noise, low capacitance, and fast rise and fall times characteristics. To help simplify many design needs, these APDs are also available in Excelitas’ high-performance...
Open the catalog to page 6Avalanche Photodiodes AVALANCHE PHOTODIODES Avalanche Photodiodes Si APD Arrays Si APD Arrays Applications • Spectroscopy • Particle detection • Spot tracking and alignment systems • Adaptive optics • LiDAR (Light Detection And Ranging) Features and Benefits • High quantum efficiency • Hermetically-sealed packages • Monolithic chip with minimal dead space between elements Product Description The C30927 series of quadrant Si Avalanche Photodiode utilize the double-diffused “reachthrough” structure. This structure provides ultra-high sensitivity at 400 nm -1100 nm. The C30927 quadrant structure...
Open the catalog to page 7Avalanche Photodiodes AVALANCHE PHOTODIODES Large Area Si-APDs – UV-Enhanced APDs Large Area Si-APDs – UV-Enhanced APDs Applications • Nuclear medicine Product Description The C30739ECERH Silicon Avalanche Photodiode (APD) is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 nm to over 700 nm. It has low noise, low capacitance and high gain. It is designed to have an enhanced short wavelength sensitivity, with quantum efficiency of 80 % at 430 nm. The standard ceramic carrier package allows for easy handling and coupling to...
Open the catalog to page 8Avalanche Photodiodes AVALANCHE PHOTODIODES From Left to Right: C30737MH (Compact, top-looking SMD) C30737EH (Through-Hole Package) C30737CH (Top/side-looking SMD) C30737LH (Top-looking SMD) C30737PH (Through-Hole Package) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD Applications • LiDAR • Laser range finding • Optical communication • Analytical instrumentation • 3D Laser scanning • Communication Systems • Gesture Recognition Product Description Graph 1 The Excelitas C30737 series silicon APDs Spectral Responsivity Characteristics provide high responsivity between...
Open the catalog to page 9Avalanche Photodiodes AVALANCHE PHOTODIODES Avalanche Photodiodes Silicon InGaAs APDs Avalanche Photodiodes – InGaAs APDs Applications • LiDAR / ToF measurements Product Description The C30644, C30645 and C30662 Series APDs are high speed InGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency, (QE), high responsivity and low noise in the spectral range between 1100 nm and 1700 nm, with standard active areas up to 200 µm in diameter. They are optimized for use at a wavelength of 1550 nm, ideally suitable for use in eye-safe laser range finding systems. These APDs are...
Open the catalog to page 10PIN PHOTODIODES PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced Si and InGaAs PIN Diodes and Quadrants Applications • LiDAR • Telecom • Instrumentation Product Description Excelitas is offering PIN Photodiodes for a broad wavelength spectrum from 400 nm to 1700 nm. Silicon PIN photodiodes are available in a wide variety of active areas to accommodate a large range of applications. The PIN structure allows high quantum efficiency and fast response for detection of photons in the 400 nm to 1100 nm range. The YAG series offers an exceptional responsivity 0.4 A/W at 1060...
Open the catalog to page 11Product Table InGaAs PIN, Large Area, Peak Wavelength at 1550 nm Breakdown Voltage Active Diameter Responsivity Peak Shunt Resistance Dark Current Product Table Silicon PIN Active Diameter Active Area Responsivity Peak Peak Wavelength Rise Time Dark Current Shunt Resistance Breakdown Voltage Operating Voltage Active Diameter Active Area Rise/Fall Time Dark Current Noise Current Product Table Specialty Silicon Detectors * Responsivity is measured at 900 and 1064 nm for 1064 nm quadrant PINs, and 1064 and 1550 nm for 1550 nm quadrant PINs. ** The YAG series of quadrant PIN photodiodes are available...
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