RF POWER AMPLIFIERS

Product catalog summary

Overview: The document provides technical specifications for the ETS-Lindgren Model 8000-001 RF Power Amplifier, designed for EMC applications, specifically meeting the IEC/EN 61000-4-3, 10 V/m requirements. It highlights the use of GaAs technology for improved performance and efficiency compared to silicon-based amplifiers.

Key Specifications:

Electrical:
- Frequency Range: 80 MHz to 1 GHz
- Nominal Output Power: 175W
- Gain Variation: ± 2 dB
- Harmonics: -20 dBc Maximum
- Output Impedance: 50 Ω
- Input VSWR: 2:1 Maximum
- AC Supply: 100 to 250 VAC, Single Phase
- Supply Frequency Range: 50/60 Hz
- Line Power: < 1 kVA
Mechanical:
- Remote Interface: GPIB
- RF Connectors: Type N
Physical:
- Dimensions: 19 in, 4U Case, 550 mm (21.7 in) Deep
- Weight: 23.0 kg (50.7 lb)
- Case Style (Standard): Rack Mount with Rear Panel Connectors
- Case Style (Optional): Bench Mount, Front Panel Connectors

Performance Features: The amplifier is noted for its high reliability, low distortion, and tolerance for 100% mismatch, making it suitable for demanding EMC testing environments.

Catalog excerpts

MODEL 8000-001 IEC/EN 61000-4-3, 10 V/m ■ High Reliability GaAs Design ■ Excellent Performance and Efficiency Safety Interlock ETS-Lindgren’s Model 8000-001 RF Power Amplifier is a 175W power amplifier, designed primarily for EMC applications that include IEC/EN 61000-4-3, 10 V/m requirements. Utilizing GaAs technology, this RF amplifier provides higher linearity, rugged design and better efficiency performance versus silicon-based amplifiers. The 8000-001 provides very low distortion and tolerance for 100% mismatch. Technical Specifications An ESCO Technologies Company Information presented is subject to change as product enhancements are made. Contact ETS-Lindgren Sales Department for current specifications. 4/15 - RR/PDF © 2015 ETS-Lindgren Rev. 1.0

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