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Discrete semiconductors Standard ICs As an expert in the management ofpower, Diodes Zetex Semiconductorsprovides product designers with a broad range of discrete semiconductor components that are renowned for their quality, high performance and optimized packaging.With its leading edge bipolartechnology, Diodes Zetex has long set the benchmark for bipolar transistor performance with very low saturation voltages and high power density components. Concise product data for the complete range of bipolar transistors, diodes and MOSFETs is presented in this selection guide. The best power management...

any substances of very high concern asdefined in the REACH legislation. Diodes Zetex is currently converting its entire portfolio to remove bromine and antimony based flame retardants.For more information, visit www.diodes.com Quality assurance, environmental and RoHScompliance Emphasizing its ongoing commitmentto product quality, Diodes ZetexSemiconductors Limited enjoys corporate status as an ISO/TS 16949:2002 certified company - the industry's most comprehensive quality management standard for companies operating in the global automotive procurement chain. This award enhances the company'sworldwide...

Bipolar transistors up to 500V 10 > NPN/PNP combinations 29 > NPN avalanche transistors 28 > Dual NPN and PNP transistors 30 > NPN & PNP Darlington transistors 28 > Gate Drive transistors 31 > H-bridges 29 > Article 32 > 2.0 Schottky diodes 36 > Power zener diodes 37 > Dual schottky diodes 36 > Rectifier stacks 37 > Rectifier diodes 37 > Back-off diodes 37 > 3.0 Medium voltage integrated drivers 50 > LED Controllers 51 > Battery operated integrated drivers 50 > Cost efficient drivers 51 > 5.0 Current output current monitors 54 > Voltage output current monitors 56 > 6 size="-2">

Industry standard references > Micro-power voltage regulators > Miniature linear regulators > Ultra-low dropout regulators > Industry standard improved regulators > Micro-power low dropout regulators > Low power DC-DC boost converters > Transistors and Schottky diode combinations > Single and multi-cell system power boost controllers > Synchronous MOSFET controller > Supply voltage monitors (uP generators) > Single cell 555 timer >

Todays portable devices demandpower switches that can operate efficiently within limited power supply headroom. The combination of low saturation voltages, high gain, and low voltage drive characteristics that bipolars offer makes them the natural choice for operation at the 5V level and below. Add their ruggedness and low thermal resistance within minimal footprints and itҒs easy to see why bipolars can also outperform MOSFETs in higher voltage applications that range from automotive power converters to telecomms interfaces. Diodes Zetex Semiconductors offers a portfolio of bipolar products...

Devices up to 25V NPN avalanche transistors 28 NPN transistors 10-12 PNP transistors 13-15Devices from 30 to 50V NPN Darlington transistors 28 PNP Darlington transistors 28 NPN transistors 16-17 PNP transistors 18-19Devices from 55 to 100V H-bridges 29 NPN/PNP combinations 29 NPN transistors 20-21 PNP transistors 22-23Devices from 120 to 220V Dual NPN transistors 30 Dual PNP transistors 30 NPN transistors 24 PNP transistors 25Devices from 300 to 500V Gate drive transistors 31Article: Applications dictate bipolar NPN transistors 26 or MOSFET power switch choices 32 PNP transistors 27 > 9 size="-1">...

Part number V > CEO I > C P > D h > FE V > CE(sat ) f > T R > CE(sat) Package @ I > C Max.mV @ I > C @ I > B V A W Min. Max. A A mA MHz m Ω >

Part number V IN V CC I source I sink I sinkPK I IN Gate Driver Switching Times (typ) @ Package MaxV MaxV @ I IN = 10mAA MaxA MaxA Condition t d(rise) t r t d(fall) t f A ns ns ns ns C > L = 1nF, R > L = 1 Ω , ZXGD3001E612124.22.291.01.37.3311V > (T6) CC = 8V, SOT23-6 V > IN = 6V, R > S = 25 Ω C > L = 1nF, R > L = 1 Ω , ZXGD3002E620202.22.091.01.258.31.610.8V > (T6) CC = 12V, SOT23-6 V > IN = 10V, R > S = 25 Ω C > L = 1nF, R > L = 1 Ω , ZXGD3003E6 40401.61.451.01.88.91.78.9V > (T6) CC = 12V, SOT23-6 V > IN = 10V, R > S = 25 Ω C > L = 1.5nF, R > L = 0.1 Ω , ZXGD3004E6 40401.91.981.01.113.40.9512.4V...

The first characteristic that designersoften consider is on-state resistance for agiven breakdown voltage. Figure 1 shows the rapid advances made by Zetex in recent years. Furthermore,bipolar transistors benefit from conductivity modulation, an effect thatincreases the advantage that the bipolar transistors hold over MOSFETs asbreakdown voltages increase.Also, dont forget that bipolar transistorsblock voltage in two directions, asspecified by their BV > R SENSE Bipolar transistors have continuedto be developed to rival or exceed MOSFET performance in many applications. ItҒs therefore important...

Characteristic Bipolar transistor MOSFET Excellent - down to half that of the best MOSFET,depending on drive current available. Good at full enhancement Moderate at low gate drive > Bi-directional blocking capability. BV > CES , BV > CEV orBV Mono-directional, may require a series Schottky diode or back-to-back MOSFET pair in some applications. > CBO may be appropriate for some applications. > Less than 1V 1.8V to 10V, depending on the optimization > Excellent: V > BE : approx. 2mV per CR R > DS(on) approx. 0.6% per аC > CE(sat) approx. 0.4% per C > Moderate High frequency: moderate > Linear...