MOSFETS
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Catalog excerpts

MOSFETS - 2

DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete, Analog, and Logic semiconductors. A focus on cost reduction, product innovation and customer service has resulted in Diodes Incorporated’s MOSFET portfolio substantially out performing the market. Clearly, DIODES INCORPORATED means MOSFET business. Its global footprint includes sales offices in 5 countries and manufacturing locations in China, Europe and the USA....

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MOSFETS - 3

Protected MOSFETs (IntelliFET™) 18 H-bridge SBR is a registered trademark of Diodes Incorporated. DIOFET and IntelliFET are trademarks of Diodes Incorporated

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20V N-channel Part Number DMN2009LSS a

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Probably the smallest most powerful MOSFET in the world…. Did you know? Diodes Incorporated has unveiled a portfolio of high performance MOSFETs packaged in the ultra-miniature DFN1006-3 package. Occupying just 0.6mm2 of PCB area and with an off-board profile of 0.4mm, these MOSFETs are designed to solve space constrained circuit layouts and are ideal for use in tablet PCs, smart phones, MP3 players, bluetooth headsets, hearing aids and thin profile LED TVs. The DFN1006-3 package takes less than half the board space of the equivalent SOT723 packaged parts and with a junction to ambient...

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MOSFETS - 6

20V P-channel Part Number DMP2022LSS

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20V Complementary Part Number ESD Configuration Type Diode (Y/N) MOSFET plus SBR Part Number MOSFET plus SBR Did you know? Diodes Incorporated’s proprietary Super Barrier Rectifier (SBR) technology delivers significantly lower forward voltage (VF) and stability at higher temperature than conventional Schottky diodes. The DMS2220UFDB co-packages SBR and a P-channel enhancement MOSFET in a small leadless package to deliver a small form factor charging solution. Product benefits Saves Space With a footprint of just 2mm2 , the DMS2220UFB occupies 55% less board space than larger 3mm2 packaged...

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Part Number Configuration /Polarity Dual N-Channel + Schottky Dual N-Channel + Schottky DIOFET Did you know? Diodes Incorporated has designed and patented a proprietary process that integrates a power MOSFET and anti-parallel schottky diode into a single die. Targeted at the low side synchronous MOSFET position of synchronous pointof-load (PoL) converters, the lower VSD and Qrr of the DIOFET family reduce conduction and switching losses improving the overall efficiency of the PoL converter lowering its operating temperature. Product benefits Low RDS(ON) The low RDS(ON) of the DIOFET...

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MOSFETS - 9

30V N-channel Part Number

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30V N-channel (continued) Part Number 30V P-channel Part Number Ciss typ.(pF) Qg typ.(nC) Qg typ.(nC) @ VDS=-15V @ VGS=4.5V @ VGS=10V

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MOSFETS - 11

DMP3010LPS Did you know? The PowerDI®5060 package has a typical Rthj-c of 2.1ºC/W which is 10 times lower than the familiar SO8 package. This superior thermal performance improves power dissipation, reducing MOSFET junction temperature, enabling cooler, more reliable running. The low typical RDS(ON) of the DMP3010LPs ensures that on state losses are kept to a minimum during load switching and battery charging. Product benefits The DMP3010LPS is qualified to AECQ101 standard and is RoHS compliant. Low thermal resistance The PowerDI5060 package has a typical Rthj-c of 2.1ºC/W. Low profile...

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MOSFETS - 12

31V to 99V N-channel Part Number

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31V to 99V N-channel (continued) Part Number MOSFET plus BJT Part Number Co-packaged MOSFET and Bipolar Did you know? Diodes Incorporated offers designers a range of co-packaged discrete circuit elements. The DMB5xxx series co-packages an N-channel enhancement mode MOSFET and a Bipolar Junction Transistor in small leadless packages such as SOT363/563. The DMB5xxx series allows designers to replace two discrete circuit elements or to configure load switches that provide the benefits of both technologies. For example, a load switch that utilizes a bipolar as the ‘pass element’ can be used in...

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MOSFETS - 14

31V to 99V P-channel Part Number

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MOSFETS - 15

A Focus on Applications Did you know? Strong customer relationships and a deep understanding of their end applications are the primary drivers of the Diodes product development strategy. For example, Diodes Incorporated has recently worked with one of its major customers to develop a 40V complementary pair to meet the stringent requirements of brushless DC motor (BLDC) circuits. The result of this collaboration is the DMC4040SSD. A 40V VDS complementary dual that features matched RDS(ON), to ensure motor load losses are balanced and minimized, and is able to handle continuous currents of 6A...

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MOSFETS - 16

100V plus N-channel Part Number

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MOSFETS - 17

100V plus P-channel Part Number MOSFET portfolio optimized for VoIP Did you know? Diodes Incorporated provides the designers of Voice over Internet Protocol (VoIP) communication equipment with a range of rugged MOSFETs that significantly reduces circuit complexity and cost. For example, DMN60xx series are designed to handle the high pulse current needed to generate tip and ring linefeeds and to withstand the avalanche energy induced during switching. This meets the stringent requirements of primary switch position in transformer based Subscriber Line Interface Circuits (SLIC) DC/DC...

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MOSFETS - 18

Protected MOSFETs (IntelliFET) Polarity Part Number Self- protected MOSFET (IntelliFET) Did you know? Diodes Incorporated designs, develops and manufactures a range of low-side self-protected MOSFETs that are ideal for switching inductive loads, such as motors, relays and lamps at low frequencies. These devices feature overtemperature, over voltage, and over current protection as well input ESD protection facilities enabling circuit designers to dramatically increase reliability. Product features Over voltage, over-temperature and over-current protection The Diodes IntelliFET portfolio is...

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MOSFETS - 19

H-bridge Did you know? Diodes Incorporated is the only vendor to offer a range of unique discrete H-bridges. Featuring dual complementary pairs of N- and P-type MOSFETs packaged in either the SO8 or SM8 package, they dramatically simplify DC fan and Cold Cathode Fluorescent Lamp (CCFL) inverter circuits as they can replace either four discrete SOT23 packaged MOSFETs or two complementary pairs, reducing both component count and PCB size in space constrained applications. A further benefit of these products is the reduction in overall inventory cost as only one device instead of two or four...

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