outperforming the market. Diodes means MOSFET business. Embracing both industry standard and differentiated products such as the industries smallest self-protected MOSFET – the ZXMS6004FFTA, the Diodes MOSFET portfolio encompasses N channel, P channel, and complementary devices with breakdown voltages up to 450V. These are packaged in single, dual, complementary, and H-bridge configurations in a wide range of package options, from the tiniest DFN1006 package, through to large surface mount packages such as TO252-3L. The breadth of the Diodes Incorporated MOSFET portfolio, now incorporating the...

Page 6 MOSFET plus SBR® Part Number Configuration Type ESD Diode (Y/N) VDS (V) VGS (±V) IDS (A) PD (W) RDS(ON) (mÙ max) at VGS= Ciss typ. (pF) @ VDS=-10V @TA=25°C @TA=25°C 4.5V 2.5V 1.8V DMS222a0LFDB MOSFETa plus SBR Pa Ya -2a0 ±1a 2 -2a.9 1.a4 9a5 12a 0 15a 0 6a27 DMS2120LFWB MOSFET plus SBR P Y -20 ±12 -3.5 1.5 95 120 150 627 DMS2220LFW MOSFET plus SBR P Y -20 ±12 -2.9 1.5 95 120 130 281 Product benefits THE DIODES ADVANTAGE MOSFET plus SBR® Did you know? Diodes Incorporated’s proprietary Super Barrier Rectifier (SBR®) technology delivers significantly lower forward voltage (VF) and stability...

P N -30 ±20 -5.5 65 115 336 4 DMC3036LSD Complementary N N 30 ±20 6.9 2.5 36 61 384 4.3 P N -30 ±20 -5.5 36 64 336 4 ZXMD63C03X Complementary N N 30 ±20 2.3 1.25 135 200 300 - P N -30 ±20 -2 185 270 280 - THE DIODES ADVANTAGE A focus on Applications Did you know? Strong customer relationships and a deep understanding of their end applications are the driving Diodes Incorporated ‘s MOSFET product development strategy. For example, The ZXMN15A27K and ZXMN20B28K are 150V 200V N-channel MOSFETs specifically designed to meet stringent requirements of the primary switch position in transformer based...

2N7002 -7 Single N 60 ±20 0.115 0.3 13500 7500 (@5V) - 22 2N7002DW Dual N 60 ±20 0.115 0.3 13500 7500 (@5V) - 22 2N7002T Single N 60 ±20 0.115 0.15 13500 7500 (@5V) - 22 2N7002VAC Dual N 60 ±20 0.28 0.15 13500 7500 (@5V) - 50 (max) VN10LP Single N 60 ±20 0.27 0.625 5000 7500 (@5V) - 60 MOSFET plus BJT Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (±V) IDS (A) PD (W) RDS(ON) (mÙ max) at VGS= Ciss typ. (pF) Qg typ. @ VGS= 25°C 25°C 10V 4.5V 2.5V DMB53Da0UDW N channeal plus NPN Ya 50a ±1a 2 0.1a 6 0.a25 a- 4000 a(@4V) 50a00 2a5 -a DMB53D0UV N channel plus NPN Y 50 ±12 0.16 0.25 - 4000 (@4V)...

ZXMS6004SG N Source 60 1.3 1.6 600 500 - 36 480 150 H-bridge Part Number Configuration Type ESD Diode (Y/N) VDS (V) VGS (±V) IDS (A) PD (W) RDS(ON) (mÙ max) at VGS= Ciss typ. (pF) Qg typ. @ VGS= 25°C 25°C 10V 4.5V a a a a a a a a a a a aa ZXMHC3F381N8 H Bridge 2*N N 30 ±20 5 1.3 33 60 430 9 2*P N -30 ±20 -4.1 55 80 670 12.7 ZXMHC3A01N8 H Bridge 2*N N 30 ±20 2.7 1.3 125 180 194 3.9 2*P N -30 ±20 -2.1 210 330 204 5.2 ZXMHC3A01T8 H Bridge 2*N N 30 ±20 3.1 1.7 125 180 194 3.9 2*P N -30 ±20 -2.3 210 330 204 5.2 ZXMHC6A07N8 H Bridge 2*N N 60 ±20 1.8 1.3 250 350 166 3.2 2*P N -60 ±20 -1.4 400 600 233...

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