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Bipolar transistor 2DA2018

Bipolar transistor 2DA2018

Bipolar transistor 2DA2018

Product catalog summary
Overview: The document provides technical specifications and information for the 2DA2018, a 12V low VCE(sat) PNP surface mount transistor by Diodes Incorporated. It is designed for use in DC-DC converters, portable equipment, and power management units.
Features: The transistor features a low collector-emitter saturation voltage, an ultra-small surface mount package, and is compliant with RoHS and "Green" standards, being halogen and antimony-free. It has an ESD rating of 400V-MM and 8KV-HBM.
Mechanical Data: The transistor is housed in a SOT-523 case made of molded plastic with a UL flammability classification of 94V-0. It has a moisture sensitivity level of 1 and terminals with a matte tin finish.
Maximum Ratings: The transistor can handle a collector-base voltage of -15V, a collector-emitter voltage of -12V, and an emitter-base voltage of -6V. It supports a continuous collector current of -500 mA and a peak pulse collector current of -1 A. The power dissipation is rated at 150 mW with a thermal resistance of 833 °C/W.
Electrical Characteristics: The transistor has a collector-base breakdown voltage of -15V, a collector-emitter breakdown voltage of -12V, and an emitter-base breakdown voltage of -6V. It features a DC current gain ranging from 270 to 680 and a collector-emitter saturation voltage of up to -250 mV.
Graphs and Figures: The document includes graphs illustrating power dissipation versus ambient temperature, transient thermal response, and various electrical characteristics such as collector current versus collector-emitter voltage and DC current gain versus collector current.
Package Outline and Pad Layout: Detailed dimensions for the SOT-523 package and suggested pad layout are provided, ensuring proper mounting and soldering.
Important Notice: Diodes Incorporated disclaims any warranties and liabilities related to the use of the document and the product. The product is not authorized for use in life support devices without explicit approval.
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Catalog excerpts

Bipolar transistor 2DA2018-1

2DA2018 12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR ADVANCE INFORMATION Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD rating: 400V-MM, 8KV-HBM Case: SOT-523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) DC-DC converter Portable equipments Power management units Device Symbol Ordering Information (Note 3) Product 2DA2018-7 Notes: Reel size (inches) 7 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information Date Code Key Year Code Month Code KTF = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) October 2010 © Diodes Incorporated

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Bipolar transistor 2DA2018-2

Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Symbol PD RθJA TJ, TSTG Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. 160 P(pk), PEAK TRANSIENT POWER (W) Single Pulse RθJA(t) = r(t) * RθJA RθJA = 470°C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 20 40 60 80 100 120...

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Bipolar transistor 2DA2018-3

2DA2018 Electrical Characteristics @TA = 25°C unless otherwise specified Symbol BVCBO BVCEO BVEBO Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 5) Collector-Emitter Saturation Voltage (Note 5) Output Capacitance Current Gain-Bandwidth Product Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time VCE(sat) Cobo fT ton td tr toff ts tf 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical...

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Bipolar transistor 2DA2018-4

VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) ADVANCE INFORMATION 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical Base-Emitter Saturation Voltage vs. Collector Current 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 11 Typical Capacitance Characteristics Package Outline Dimensions...

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Bipolar transistor 2DA2018-5

ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application...

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