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808nm, Conduction-Cooled, QCW, Vertical Diode Laser Stack

808nm, Conduction-Cooled, QCW, Vertical Diode Laser Stack
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808nm, Conduction-Cooled, QCW, Vertical Diode Laser Stack - 1

Diode Laser Stack The diode laser company. - Compact and planar design - Center hole for module alignment - High environmental temperature range - High output power bar Device Specification Center Wavelength Tolerance nm ±3 Fast-Axis Divergence without Optics degree 70 Fast-Axis Divergence with Fast-Axis Collimation mrad <8 Slow-Axis Divergence degree <10 Wavelength Temp. Coefficient nm/°C 0.27 Power Conversion Efficiency % >55 High Duty Cycle % 2 Thermal Parameters Recommended Heatsink Capacity per Bar W >20 ^ata at 20°C cold water temperature. 2Reduced lifetime if used above nominal operating conditions. 4A non-condensing environment is required for storage and operation below the ambient dew point.

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808nm, Conduction-Cooled, QCW, Vertical Diode Laser Stack - 2

808nm, Conduction-Cooled, QCW, Vertical Diode Laser Stack Package Dimension VISIBLE AND INVISIBLE LASER RADIATION. AVOID EYE OR SKIN EXPOSURE TO DIRECT OR SCATTERED RADIATION! CLASS 4 LASER PRODUCT IEC 825-1 610584 ©2012 DILAS. All rights reserved. DILAS reserves the right to change product specifications without notice. For handling precautions, please reference the general handling instruction manual. For complete details, please contact your local DILAS sales representative or visit our website at www.DILAS.com. Europe DILAS Diodenlaser GmbH Galileo-Galilei-Straße 10 55129 Mainz Germany...

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